A Method of Improving Surface Resistance to Intense Beam Pulse Thermal Fatigue
A thermal fatigue and pulse technology, applied in the direction of diffraction/refraction/reflection processing, etc., can solve the problems of thermal fatigue effect, surface peeling damage, short service life of components, etc., to reduce thermal stress, reduce temperature gradient, reduce The effect of small heat absorption
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Embodiment 1
[0028] Such as Figure 4 As shown, the micro-stripe structure is etched from the silicon surface. First, using the existing "metal catalyzed etching technology" (see the end of this embodiment for details of the specific process steps), etch a strip structure perpendicular to the surface on the surface of n-type low-resistance single crystal silicon, the cross-section of the thin silicon strip is not Regular shape, the cross-sectional dimension is about 300 nanometers, the average gap is about 200 nanometers, and the thin strip length is about 3 microns. The overall strip arrangement structure is composed of mirrors on the end surface, and a negative voltage (-300V) is applied to the surface, which can withstand 1.5J / cm 2 The XFEL beam is irradiated with 1500 pulses, and the surface does not produce thermal fatigue cracks and peeling.
[0029] The specific process steps of the "metal catalytic etching technology" adopted in this embodiment: as in this example, the catalytic ...
Embodiment 2
[0031] Using silicon as the substrate, the functional geometric surface of the grating is first engraved on the silicon surface, and then a cylindrical arrangement structure with a diameter of 5 nanometers, a length of 10 microns and a gap of 1 nanometer is grown on the functional geometric surface of the grating by chemical vapor deposition technology. , nano-carbon cylinders grow perpendicular to the silicon surface, and the cross-sectional shape is circular. The surface of the grating composed of the carbon nanotube arrangement structure, and a negative voltage (-5000V) is applied on the surface, which can withstand 5.0J / cm 2 The XFEL beam is irradiated with 8000 pulses, and the surface does not produce thermal fatigue cracks and peeling.
Embodiment 3
[0033] silicon boride (SiB 3 ) is the surface material of the component, and a strip structure perpendicular to the surface is etched on the surface by photolithography. The cross-section of the thin strip is square, the cross-sectional size is 10 microns, the gap between the thin strips is 5 microns, and the length of the thin strip is 30 microns. The concave mirror composed of the upper surface of the overall strip arrangement structure, no negative voltage is applied to the surface, and can withstand 2.5J / cm 2 The XFEL beam is irradiated with 1000 pulses, and the surface does not produce thermal fatigue cracks and peeling. If a negative voltage of -800V is applied to the surface, it can withstand 3.0J / cm 2 The XFEL beam is irradiated with 1500 pulses, and the surface does not produce thermal fatigue cracks and peeling.
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