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An LED structure and a method for manufacture that LED structure

A technology of LED structure and prestressed layer, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency of deep ultraviolet LEDs, improve light extraction efficiency, strong flexibility in stress regulation, and improve front light output. Effect

Pending Publication Date: 2019-01-04
GUANGDONG INST OF SEMICON IND TECH
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  • Abstract
  • Description
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Problems solved by technology

[0005] In view of this, the object of the present invention is to provide an LED structure to solve the problem of low luminous efficiency of deep ultraviolet LEDs in the prior art
[0006] Another object of the present invention is to provide a method for manufacturing an LED structure to solve the problem of low luminous efficiency of deep ultraviolet LEDs in the prior art

Method used

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  • An LED structure and a method for manufacture that LED structure
  • An LED structure and a method for manufacture that LED structure
  • An LED structure and a method for manufacture that LED structure

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no. 2 example

[0051] see image 3 , the embodiment of the present invention also provides a LED structure 100 manufacturing method, the LED structure 100 method includes:

[0052] Step S101 , epitaxially growing the prestressed layer 120 on the template layer 110 .

[0053] Wherein, step S101 includes:

[0054] Sub-step S1011, epitaxially growing an AlN buffer layer on the substrate, wherein the growth temperature of the AlN buffer layer includes 700°C.

[0055] In this embodiment, when the prestressed layer 120 needs to be grown, a layer of low-temperature AlN needs to be grown on the substrate as a buffer layer first, and the growth temperature is 700°C. Wherein, the substrate described in this embodiment includes but is not limited to one of sapphire substrate, Si substrate, SiC substrate, GaN single crystal substrate, AlN single crystal substrate or a composite substrate thereof.

[0056] Sub-step S1012, according to TEGa, NH3 and TMAl as gallium source, nitrogen source and aluminum ...

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Abstract

The invention provides an LED structure and a manufacturing method of the LED structure, which relate to the technical field of LED manufacturing. The LED structure comprises a template layer, a prestressed layer, an N-type nitride layer, a quantum well layer, and a P-type nitride layer, a template layer, a prestressed layer, an N-type nitride layer, a quantum well layer and a P-type nitride layerare connected layer by layer, and the prestressed layer is used for regulating the stress of the LED structure. The LED structure and the manufacturing method of the LED structure provided by the invention have the advantages of improving the light extraction efficiency.

Description

technical field [0001] The invention relates to the technical field of LED manufacturing, in particular to an LED structure and a method for manufacturing the LED structure. Background technique [0002] The deep ultraviolet light-emitting diode (UVLED, ultraviolet light-emitting diode) based on AlGaN material has broad application prospects in many fields such as biochemical detection, sterilization and disinfection, polymer curing, wireless communication and white light lighting, and has low voltage, low power consumption, Small and light, green and environmentally friendly, adjustable wavelength, rapid switching and many other advantages, so more and more researchers have paid more and more attention in recent years. [0003] At present, the luminous efficiency of deep ultraviolet LEDs is generally low (1%-3%), especially deep ultraviolet LEDs with wavelengths in the UV-B (290-320nm) and UV-C (200-290nm) bands. It is far lower than the luminous efficiency of visible ligh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/12
CPCH01L33/0075H01L33/02H01L33/12
Inventor 王君君陈志涛刘宁炀何晨光王巧
Owner GUANGDONG INST OF SEMICON IND TECH
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