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Preparation method of a polycrystalline silicon layer, crystallization processing system, transistor and display device

A technology of polysilicon layer and crystallization treatment, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of increasing the preparation process and difficulty in improving production efficiency

Inactive Publication Date: 2019-01-18
BOE TECH GRP CO LTD
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Problems solved by technology

[0004] In some transistors, LTPS needs to be doped to improve the corresponding electrical properties of the active layer, which will increase the corresponding preparation process and make it difficult to improve production efficiency

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  • Preparation method of a polycrystalline silicon layer, crystallization processing system, transistor and display device
  • Preparation method of a polycrystalline silicon layer, crystallization processing system, transistor and display device
  • Preparation method of a polycrystalline silicon layer, crystallization processing system, transistor and display device

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Embodiment Construction

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0036] Hereinafter, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present application, unless otherwise specified, "plurality" means two...

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Abstract

The invention provides a preparation method of a polycrystalline silicon layer, a crystallization processing system, a transistor and a display device, and relates to the technical field of display, and simplify the preparation process of a polycrystalline silicon layer requiring ion doping. The preparation method of the polycrystalline silicon layer comprises the following steps of: forming an amorphous silicon layer over a substrate; The amorphous silicon layer has an upper surface on a side remote from the substrate, the upper surface comprising: a region to be doped; At least that region to be doped is brought into contact with the ion implantation compound; A laser irradiation is performed on the region to be doped so that preset ions in the ion implantation compound are implanted into the region to be doped, and a portion of the amorphous silicon layer corresponding to the region to be doped is converted into polysilicon.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a preparation method of a polysilicon layer, a crystallization treatment system, a transistor and a display device. Background technique [0002] Low Temperature Polysilicon (LTPS for short) has high carrier mobility (up to 10-300cm) due to its regular arrangement of atoms. 2 / Vs), has a higher driving current, can reduce the volume of the transistor, increase the transmission area in the pixel unit, and make the display device have higher brightness and resolution. Therefore, LTPS thin film preparation is widely used in the transistor manufacturing process active layer. [0003] In related technologies, laser annealing technology is usually used to crystallize amorphous silicon (a-Si for short) into polysilicon (p-Si for short). [0004] In some transistors, LTPS needs to be doped to improve the corresponding electrical properties of the active layer, which will increase the ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02595H01L21/02675
Inventor 高宇鹏关峰王治
Owner BOE TECH GRP CO LTD
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