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Method for improving interface of all-solid-state thin film secondary lithium ion battery positive electrode and electrolytic layer thin film

A lithium-ion battery, electrolytic layer technology, applied in secondary batteries, battery electrodes, non-aqueous electrolyte batteries, etc., can solve the problem of poor ionic conductivity, solid-state secondary lithium-ion battery output performance such as poor current and capacity, poor contact interface and other problems, to achieve the effect of improving uniformity, improving output current density and fast charge and discharge characteristics, and reducing deposition thickness

Inactive Publication Date: 2019-02-01
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the ionic conductivity of the solid-state electrolyte is poor, especially the poor contact interface with the positive electrode oxide material, which makes the output performance of the solid-state secondary lithium-ion battery such as current and capacity poor.

Method used

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  • Method for improving interface of all-solid-state thin film secondary lithium ion battery positive electrode and electrolytic layer thin film
  • Method for improving interface of all-solid-state thin film secondary lithium ion battery positive electrode and electrolytic layer thin film

Examples

Experimental program
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Effect test

Embodiment 1

[0016] Using LiNi 1 / 3 co 1 / 3 Al 1 / 3 o 2 As the cathode material, LiCoO 2 After preparing the slurry, the LiCoO 2 The slurry was cast into a 10-micron substrate, and then heat-treated at 400° C. to form a dense positive electrode material substrate. The prepared cathode material substrate is put into the chamber of the plasma processing equipment, the power of the used plasma is 90KW, adopts O 2 Plasma sources combined with F-containing compounds, for LiCoO 2 One side of the substrate was subjected to scanning bombardment etching, and the etching time was 0.5 hours. Then, the magnetron plasma sputtering method is used in situ to deposit a thin film with the same composition as the positive electrode material on the etched positive electrode material substrate, and the sputtering power is 110KW. Sputter for 1 hour. After the sputtering is completed, plasma is used to etch the surface for 0.5 hour to obtain a flat and smooth positive electrode material surface.

Embodiment 2

[0018] Using LiNi 1 / 3 co 1 / 3 Al 1 / 3 o 2 As the cathode material, LiCoO 2 After preparing the slurry, the LiCoO 2 The slurry is cast into a 200-micron substrate, and then heat-treated at 850° C. to form a dense positive electrode material substrate. Put the prepared cathode material substrate into the chamber of plasma processing equipment, the power of the plasma used is 150KW, and the plasma source combining Ar and F-containing compound is used to treat LiCoO 2 One side of the substrate was etched by scanning bombardment for 3 hours. Then, the magnetron plasma sputtering method is used in situ to deposit a thin film with the same composition as the positive electrode material on the etched positive electrode material substrate, and the sputtering power is 150KW. Sputter for 3 hours. After the sputtering is completed, plasma is used to etch the surface for 1 hour to obtain a flat and smooth positive electrode material surface.

Embodiment 3

[0020] Using LiNi 0.6 co 0.2 mn 0.2 o 2 (LNCM) positive electrode material, adopt the method used in embodiment 1 to prepare dense positive electrode material substrate, then fix the positive electrode material substrate on the chemical mechanical polishing machine and carry out CMP polishing. The polishing agent uses diamond, CMP polishing for 1 hour, and then adopts the magnetron sputtering process in Example 1 to deposit a layer of LNCM on the polished surface, and then uses plasma to etch the surface for 0.5 hours to obtain a smooth positive electrode material surface.

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Abstract

The invention provides a method for improving an interface of an all-solid-state thin film secondary lithium ion battery positive electrode and an electrolytic layer thin film. The method includes: preparing a positive electrode material of a secondary lithium ion battery into a compact substrate, adopting plasma technology or a chemical-mechanical polishing method to treat one surface of the substrate, adopting a magnetron sputtering method to deposit a layer of same-composition positive electrode material on the treated surface, and adopting plasma to etch the surface to obtain the substratesurface with ideal surface low defect concentration. The method can further improve uniformity of the electrolytic thin film on the positive electrode material substrate, so that depositing thicknessof the electrolyte thin film is further reduced, and output current density and quick charging-discharging characteristics of the all-solid-state thin film secondary lithium ion battery are improved.

Description

technical field [0001] The invention relates to a method for improving the interface between the positive electrode of an all-solid thin film secondary lithium ion battery and the thin film of an electrolytic layer. Background technique [0002] The safety of the all-solid-state thin-film secondary lithium-ion battery is completely guaranteed because the solid-state electrolyte is used instead of the traditional liquid electrolyte. However, the ionic conductivity of the solid-state electrolyte is poor, especially the poor contact interface with the positive electrode oxide material, which makes the output performance of the solid-state secondary lithium-ion battery such as current and capacity poor. In order to further improve the contact performance between the cathode material and the thin film electrolyte, various methods such as using a polymer ion-conducting material interlayer as a transition layer have also been adopted. On the other hand, in order to overcome the li...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M10/0525H01M4/1391H01M10/058
CPCH01M4/1391H01M10/0525H01M10/058Y02E60/10Y02P70/50
Inventor 李晓干薛文东奚伊刘炜
Owner DALIAN UNIV OF TECH
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