32results about How to "Reduce deposition thickness" patented technology

A semiconductor device includes a substrate having a die region and a scribe region surrounding the die region, a plurality of via structures penetrating through the substrate in the die region, a portion of the via structure being exposed over a surface of the substrate, and a protection layer pattern structure provided on the surface of the substrate surrounding a sidewall of the exposed portion of the via structure and having a protruding portion covering at least a portion of the scribe region adjacent to the via structure.

The invention provides a method for preparing a flash memory. The invention performs oxidation treatment on a semiconductor substrate formed with a tunnel oxide layer before forming a floating gate, so as to enhance the stability of the surface of the active region in contact with the tunnel oxide layer. Simultaneously, the present invention reduces the deposition thickness of the metal layer that prepares metal silicide and carries out the heat treatment that will form metal silicide in two stages, helps to strengthen the stability and the surface uniformity of metal silicide, wherein, the second heat treatment Phase is higher temperature and shorter than the first phase. The present invention uses the above method to prevent the metal silicide from irregularly corroding to the contact surface of the gate structure and the active region, thereby reducing the programming interference caused by the irregular erosion, achieving the purpose of suppressing the programming interference of the flash memory, and further avoiding The reliability of the drain region is reduced during cycle operation, while avoiding the data retention of the flash memory to generate tail bits.

The invention discloses a battery electrolyte containing ammonium iodide additive and a preparation method thereof, belonging to the technical field of battery materials. The electrolyte provided by the invention includes an organic solvent, a lithium salt and an additive, and the additive includes ammonium iodide. Anion I of the ammonium iodide additive of the present invention ‑ A solid electrolyte interface film containing LiI can be formed on the surface of lithium metal, and the amine-based cation and Li 2 There are hydrogen bonds between S, which can reduce Li 2 The energy barrier of S conversion improves the utilization rate of active material sulfur. The anion and cation of the additive used in the present invention can act on both anions and cations, and have different action angles, which can greatly improve the efficiency of the electrolyte and reduce the usage amount of the electrolyte.

A conductive structure includes a contact plug extending through an insulating layer on a substrate, and first and second conductive lines extending alongside one another on the insulating layer. The first conductive line extends on the contact plug. A connecting line on the insulating layer extends between and electrically connects the first and second conductive lines. Related integrated circuit devices and fabrication methods are also discussed.

The invention discloses an alkali metal doping treatment method for large-scale production of copper indium gallium selenide thin film solar cells, which comprises the following steps in sequence: (1) first depositing a layer of Mo back electrode layer; (2) depositing a layer of alkali Metal halide; (3) co-evaporate In, Ga, and the sixth main group solid element again, (4) re-co-evaporate Cu, the sixth main group solid element; (5) deposit another layer of alkali metal halide; (6 ) Co-evaporating Cu and the sixth main group solid element; (7) Co-evaporating In, Ga, and the sixth main group solid element; (8) finally depositing a layer of alkali metal halide; (9) annealing treatment. The invention can effectively increase the adhesion between the Mo layer and the CIGS layer, increase the CIGS hole concentration, reduce the surface roughness of the film, reduce the thickness of the CdS buffer layer, and improve the open circuit voltage and photoelectric conversion efficiency of the thin film solar cell.

The invention discloses a method for improving the photoelectric performance of a heterojunction solar cell. The covering layer has the functions of surface anti-reflection, carrier conduction, and electrode selective deposition mask. The steps are as follows: (a) preparing a heterojunction solar cell Battery substrate; (b) deposition of metal seed layer gate; (c) deposition of cover layer in non-gate area; (d) drying of cover layer; (e) electrochemical deposition of metal electrodes in gate area; (f) cover layer Post-processing; (g) drying the overlay. The method described in the present invention can significantly reduce the complexity of the electrochemical deposition metal electrode process, and the photoelectric performance of the polymer coating used after treatment is significantly improved, and can also be used as a transparent conductive film for heterojunction solar cells. The conventional heterojunction solar cell electrochemical deposition electrode removal mask process can also be used with less or no transparent conductive film, which is conducive to improving the conversion efficiency of heterojunction solar cells and reducing production costs, and has significant advantages in industrial production.

The invention relates to a slagging promoting device for an ultra-thick clay layer positive-cycle and a construction method of the slagging promoting device. The device comprises crushing steel wire rope bundles, steel wire rope clamps, a fixing pressing bar and a drill rod. The crushing steel wire rope bundles are composed of a plurality of steel wire ropes. Each steel wire rope is connected to be in a ring shape through the corresponding steel wire rope. The crushing steel wire rope bundles are fixed to the drill rod in sequence through the fixing pressing bar. The steel wire rope bundles are symmetrically arranged along the drill pipe in two rows. The construction method includes the steps that the discharging length of each steel wire rope is calculated according to the diameter of a pile hole; the steel wire rope clamps are used for locking all the steel wire ropes into ring shapes, and the position, on the surface of the drill rod, of each steel wire rope is marked; the fixing pressing bar is used for fixing the steel wire rope bundles to the drill rod in sequence according to the sizes of diffusion diameters; a common positive-cycle drilling machine is used for drilling to the position close to a clay layer; and a first section of a common drill pipe is replaced with the drill pipe manufactured in the step, and subsequent drilling construction work is conducted. According to the slagging promoting device, the slagging capability and the drilling efficiency of the positive-cycle construction technology in drilling in the ultra-thick clay layer are effectively improved.