32results about How to "Reduce deposition thickness" patented technology

A wet type buffing method is practiced such that a final buffing step is conducted in a buffing liquid having alkality and the remaining buffing steps are conducted in other buffing liquid having acidity. A work buffing apparatus is constructed such that a disconnection preventive member is disposed at the foremost end of a shaft for a work, the outside of a buffing wheel comes in contact with the disconnection preventive member, a tightening nut is threadably engaged with the buffing wheel, and the buffing wheel is tightly fixed to the shaft by displacing the tightening nut along the shaft. In addition, a surface treatment conducting method is practiced such that each surface treatment is conducted after a work is subjected to barrel buffing before or after the surface treatment. Additionally, a work supporting apparatus includes a buffing medium receiving container having a buffing medium received therein and a work supporting arm. Further, a buffing medium employable for a buffing apparatus is composed of grain of soft material or small block of the soft material.

The invention relates to a slagging promoting device for an ultra-thick clay layer positive-cycle and a construction method of the slagging promoting device. The device comprises crushing steel wire rope bundles, steel wire rope clamps, a fixing pressing bar and a drill rod. The crushing steel wire rope bundles are composed of a plurality of steel wire ropes. Each steel wire rope is connected to be in a ring shape through the corresponding steel wire rope. The crushing steel wire rope bundles are fixed to the drill rod in sequence through the fixing pressing bar. The steel wire rope bundles are symmetrically arranged along the drill pipe in two rows. The construction method includes the steps that the discharging length of each steel wire rope is calculated according to the diameter of a pile hole; the steel wire rope clamps are used for locking all the steel wire ropes into ring shapes, and the position, on the surface of the drill rod, of each steel wire rope is marked; the fixing pressing bar is used for fixing the steel wire rope bundles to the drill rod in sequence according to the sizes of diffusion diameters; a common positive-cycle drilling machine is used for drilling to the position close to a clay layer; and a first section of a common drill pipe is replaced with the drill pipe manufactured in the step, and subsequent drilling construction work is conducted. According to the slagging promoting device, the slagging capability and the drilling efficiency of the positive-cycle construction technology in drilling in the ultra-thick clay layer are effectively improved.

An apparatus and system for in-situ electropolishing and/or for in-situ electroforming a structural or functional reinforcement layer such as a sleeve of a selected metallic material on the internal surfaces of metallic tubular conduits are described. The apparatus and system can be employed on straight tubes, tube joints to different diameter tubes or face plates, tube elbows and other complex shapes encountered in piping systems. The apparatus includes components which can be independently manipulated and assembled on or near a degraded site and, after secured in place, form an electrolytic cell within the workpiece. The apparatus contains counter-electrodes which can be moved relative to the workpiece surface during the electroplating and/or electropolishing operation to provide flexibility in selecting and employing electropolishing process parameters and electroplating process parameters to design and optimize the surface roughness as well as the size, shape and properties of the electrodeposited reinforcing layer(s).

The invention discloses a bottom sludge coagulating reduction as well as a preparation method and application thereof. The bottom sludge coagulating reduction comprises the following ingredients in parts by weight: 25-35 parts of polyaluminium chloride, 25-35 parts of polyferric sulfate, 1-5 parts of sodium polyacrylate, 15-25 parts of calcium bentonite, 5-15 parts of dolomite, 5-10 parts of a bottom sludge conditioner and 1-5 parts of sodium ferrate. According to the coagulating reduction, in-situ, fast, efficient and stable coagulation, passivation and settling separation are performed on bottom sludge, suspended matters and the like in a governance process of urban black and odorous water bodies, so that the volume of dirty muddy water and pollutants such as COD (chemical oxygen demand), NH3-N, TP (total phosphorus), heavy metals and the like in the water bodies are quickly reduced, the transparency of the water bodies is purified, the self-purification capacity of the water bodies is enhanced, and the ecological restoration of the water bodies is promoted. Therefore, the purposes of landscape restoration and sludge and water co-governance are achieved; compared with the traditional black and odorous water body bottom sludge dredging technology, a technology adopting the bottom sludge coagulating reduction has outstanding advantages.

A sputtering apparatus and method are disclosed which can reduce deviations in the deposition thickness on the target object. The sputtering apparatus may include a chamber body and a targeting module. The targeting module may be positioned inside the chamber body and may include a source and at least one magnet unit, where the magnet unit may be configured to generate a magnetic field. Here, the magnet unit can be made to swing during a sputtering process.

The invention provides a method for improving an interface of an all-solid-state thin film secondary lithium ion battery positive electrode and an electrolytic layer thin film. The method includes: preparing a positive electrode material of a secondary lithium ion battery into a compact substrate, adopting plasma technology or a chemical-mechanical polishing method to treat one surface of the substrate, adopting a magnetron sputtering method to deposit a layer of same-composition positive electrode material on the treated surface, and adopting plasma to etch the surface to obtain the substratesurface with ideal surface low defect concentration. The method can further improve uniformity of the electrolytic thin film on the positive electrode material substrate, so that depositing thicknessof the electrolyte thin film is further reduced, and output current density and quick charging-discharging characteristics of the all-solid-state thin film secondary lithium ion battery are improved.

The invention discloses a global (one-time) manufacturing method for contact metal of a source region and a drain region of a carbon nanotube device. The method comprises the following steps: an interlayer dielectric layer is deposited on a dummy gate structure, and flattening is carried out to remove the inclined side wall parts on the two sides of the top of the dummy gate structure; a dummy gate in a groove structure is removed; a gate dielectric, a metal gate and a lead metal layer are sequentially deposited, and flattening is carried out to further remove the inclined side wall parts on the two sides of the top of the gate so as to form side walls only having vertical side wall surfaces; a source-drain metal pattern is defined, a source-drain contact metal layer is deposited, and theresidual metal layer on the surface of the spacer is selectively removed; an etching stop layer and a second interlayer dielectric layer are sequentially deposited, and flattening is carried out; anda source-drain contact hole and a gate lead metal layer contact hole are formed and filled with metal. The method can eliminate the influence of the morphology of the inclined side walls on the two sides of the top of the gate on the deposition of the source-drain metal, and remarkably reduces the deposition thickness of the source-drain metal on the surfaces of the side walls.

The present invention disclosed the deposition source installed in a chamber, heated by applied electric power to transfer heat to a vapor deposition material received therein and applying a vaporized deposition material generated therein to a substrate to form deposition organic electroluminescent layers onto the substrate, and comprising a vessel consisted of a top plate on which a vapor efflux aperture is formed, a side wall, and a bottom wall; a heating means for supplying heat to the deposition material received in the vessel, the heating means being capable of moving vertically; and a means for moving the heating means (or the bottom wall), the moving means (or the bottom wall) being operated in response to the signal of a sensing means on varied distances between the heating means and the surface of said deposition material. Thus, the heating means is moved downward (or the bottom wall) is moved upward by the moving means to maintain the distance between the heating means (or the substrate to be coated) and the surface of the deposition material at an initially-set value when the thickness of the deposition material is decreased.

A composite, including a first semiconductor substrate that is secured by soldering material to at least one second semiconductor substrate, a eutectic being formed between the soldering material and the second semiconductor substrate and/or at least one layer possibly provided on the semiconductor substrate. It is provided that the eutectic is formed between the soldering material and a microstructure, which is formed in the region of contact with the soldering material on the second semiconductor substrate and/or the layer. Also described is a production method.

The invention discloses an alkali metal doping treatment method for large-scale production of a copper-indium-gallium-selenium thin-film solar cell. The method sequentially comprises the following steps: (1) depositing a Mo back electrode layer; (2) depositing a layer of alkali metal halide; (3) co-evaporating In, Ga and sixth main group solid elementary substances; (4) co-evaporating Cu and sixthmain group solid elementary substances; (5) depositing a layer of alkali metal halide; (6) co-evaporating Cu and sixth main group solid elementary substances; (7) co-evaporating In, Ga and sixth maingroup solid elementary substances; (8) depositing a layer of alkali metal halide; (9) performing annealing treatment. According to the method, the adhesive force of the Mo layer and the CIGS layer can be effectively increased, the CIGS hole concentration is increased, the surface roughness of the thin film is reduced, the thickness of the CdS buffer layer is reduced, and the open-circuit voltageand the photoelectric conversion efficiency of the thin film solar cell are improved.

The invention provides a polysilicon etching method. Through processing a photoresist which is formed after photoresist patterning and a residual bottom antireflective coating (BARC) layer after etching by means of plasma which has advantages of high frequency, low pressure and zero bias voltage and comprises HBr, edges of the photoresist and the residual BARC layer are smoothed. Then, the residual photoresist and the BARC layer after processing by the plasma which comprises the HBr is used as a mask for etching a hard mask layer and a polysilicon layer on the upper surface of the semiconductor substrate, thereby settling a problem of rough line edge of the polysilicon. Furthermore, the surface of processed photoresist absorbs the plasma which comprises HBr and Cl2, and the property of the photoresist changes. Etching resistance is improved, and selectivity ratio to the hard mask is improved, thereby reducing deposition thickness of the photoresist layer, and furthermore reducing time and raw material consumed in depositing the photoresist. Namely the polysilicon etching method has advantages of reducing production cost, improving production efficiency and saving resource.

The present invention discloses a method for manufacturing semiconductor device wherein a cleaning process of a buffer layer is performed prior to a formation of a nitride film. The cleaning process allows to maintain the deposition thickness of the nitride film even when the time between the formation of the buffer layer and the formation of the nitride film is long.

The invention discloses a battery electrolyte containing an amine iodide additive and a preparation method of the battery electrolyte, and belongs to the technical field of battery materials. The electrolyte provided by the invention comprises an organic solvent, a lithium salt and an additive, wherein the additive comprises amine iodide. The anion I<-> of the amine iodide additive can form a solid electrolyte interface film containing LiI on the surface of metal lithium, hydrogen-bond interaction exists between amido cations and Li2S, an energy barrier of Li2S conversion can be reduced, and the utilization rate of an active substance sulfur is increased. According to the additive used in the invention, both anions and cations can act, and the acting angles are different, so that the efficiency of the electrolyte can be greatly improved, and the usage amount of the electrolyte can be reduced.

An aqueous bath for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy, the bath comprising

• • a source of nickel ions, and optionally a source of ions of at least one alloying metal,
  • at least one buffering agent,
  • at least one of a dimer of a compound of formula (I) or mixtures thereof

The invention provides a conductive structure and an integrated circuit assembly. The conductive structure includes a contact plug extending through an insulating layer on a substrate, and first and second conductive lines extending alongside one another on the insulating layer. The first conductive line extends on the contact plug. A connecting line on the insulating layer extends between and electrically connects the first and second conductive lines. Related integrated circuit devices and fabrication methods are also discussed.