32results about How to "Reduce deposition thickness" patented technology

A semiconductor device includes a substrate having a die region and a scribe region surrounding the die region, a plurality of via structures penetrating through the substrate in the die region, a portion of the via structure being exposed over a surface of the substrate, and a protection layer pattern structure provided on the surface of the substrate surrounding a sidewall of the exposed portion of the via structure and having a protruding portion covering at least a portion of the scribe region adjacent to the via structure.

A deposition source is provided which is installed in a chamber, heated by applied electric power to transfer heat to a vapor deposition material received therein and applying a vaporized deposition material generated therein to a substrate to form deposition organic electroluminescent layers onto the substrate. The deposition source includes a vessel formed of a top plate on which a vapor efflux aperture is formed, a side wall, and a bottom wall; a heating device that supplies heat to the deposition material received in the vessel, the heating device being capable of moving vertically; and a moving device that moves the heating device (or the bottom wall), the moving device (or the bottom wall) being operated in response to the signal of a sensing device on varied distances between the heating device and the surface of said deposition material. Thus, the heating device is moved downward (or the bottom wall) is moved upward by the moving device to maintain the distance between the heating device (or the substrate to be coated) and the surface of the deposition material at an initially-set value when the thickness of the deposition material is decreased.

A wet type buffing method is practiced such that a final buffing step is conducted in a buffing liquid having alkality and the remaining buffing steps are conducted in other buffing liquid having acidity. A work buffing apparatus is constructed such that a disconnection preventive member is disposed at the foremost end of a shaft for a work, the outside of a buffing wheel comes in contact with the disconnection preventive member, a tightening nut is threadably engaged with the buffing wheel, and the buffing wheel is tightly fixed to the shaft by displacing the tightening nut along the shaft. In addition, a surface treatment conducting method is practiced such that each surface treatment is conducted after a work is subjected to barrel buffing before or after the surface treatment. Additionally, a work supporting apparatus includes a buffing medium receiving container having a buffing medium received therein and a work supporting arm. Further, a buffing medium employable for a buffing apparatus is composed of grain of soft material or small block of the soft material.

The invention relates to a slagging promoting device for an ultra-thick clay layer positive-cycle and a construction method of the slagging promoting device. The device comprises crushing steel wire rope bundles, steel wire rope clamps, a fixing pressing bar and a drill rod. The crushing steel wire rope bundles are composed of a plurality of steel wire ropes. Each steel wire rope is connected to be in a ring shape through the corresponding steel wire rope. The crushing steel wire rope bundles are fixed to the drill rod in sequence through the fixing pressing bar. The steel wire rope bundles are symmetrically arranged along the drill pipe in two rows. The construction method includes the steps that the discharging length of each steel wire rope is calculated according to the diameter of a pile hole; the steel wire rope clamps are used for locking all the steel wire ropes into ring shapes, and the position, on the surface of the drill rod, of each steel wire rope is marked; the fixing pressing bar is used for fixing the steel wire rope bundles to the drill rod in sequence according to the sizes of diffusion diameters; a common positive-cycle drilling machine is used for drilling to the position close to a clay layer; and a first section of a common drill pipe is replaced with the drill pipe manufactured in the step, and subsequent drilling construction work is conducted. According to the slagging promoting device, the slagging capability and the drilling efficiency of the positive-cycle construction technology in drilling in the ultra-thick clay layer are effectively improved.

An apparatus and system for in-situ electropolishing and / or for in-situ electroforming a structural or functional reinforcement layer such as a sleeve of a selected metallic material on the internal surfaces of metallic tubular conduits are described. The apparatus and system can be employed on straight tubes, tube joints to different diameter tubes or face plates, tube elbows and other complex shapes encountered in piping systems. The apparatus includes components which can be independently manipulated and assembled on or near a degraded site and, after secured in place, form an electrolytic cell within the workpiece. The apparatus contains counter-electrodes which can be moved relative to the workpiece surface during the electroplating and / or electropolishing operation to provide flexibility in selecting and employing electropolishing process parameters and electroplating process parameters to design and optimize the surface roughness as well as the size, shape and properties of the electrodeposited reinforcing layer(s).

The invention discloses a bottom sludge coagulating reduction as well as a preparation method and application thereof. The bottom sludge coagulating reduction comprises the following ingredients in parts by weight: 25-35 parts of polyaluminium chloride, 25-35 parts of polyferric sulfate, 1-5 parts of sodium polyacrylate, 15-25 parts of calcium bentonite, 5-15 parts of dolomite, 5-10 parts of a bottom sludge conditioner and 1-5 parts of sodium ferrate. According to the coagulating reduction, in-situ, fast, efficient and stable coagulation, passivation and settling separation are performed on bottom sludge, suspended matters and the like in a governance process of urban black and odorous water bodies, so that the volume of dirty muddy water and pollutants such as COD (chemical oxygen demand), NH3-N, TP (total phosphorus), heavy metals and the like in the water bodies are quickly reduced, the transparency of the water bodies is purified, the self-purification capacity of the water bodies is enhanced, and the ecological restoration of the water bodies is promoted. Therefore, the purposes of landscape restoration and sludge and water co-governance are achieved; compared with the traditional black and odorous water body bottom sludge dredging technology, a technology adopting the bottom sludge coagulating reduction has outstanding advantages.

A sputtering apparatus and method are disclosed which can reduce deviations in the deposition thickness on the target object. The sputtering apparatus may include a chamber body and a targeting module. The targeting module may be positioned inside the chamber body and may include a source and at least one magnet unit, where the magnet unit may be configured to generate a magnetic field. Here, the magnet unit can be made to swing during a sputtering process.

The present invention disclosed the deposition source installed in a chamber, heated by applied electric power to transfer heat to a vapor deposition material received therein and applying a vaporized deposition material generated therein to a substrate to form deposition organic electroluminescent layers onto the substrate, and comprising a vessel consisted of a top plate on which a vapor efflux aperture is formed, a side wall, and a bottom wall; a heating means for supplying heat to the deposition material received in the vessel, the heating means being capable of moving vertically; and a means for moving the heating means (or the bottom wall), the moving means (or the bottom wall) being operated in response to the signal of a sensing means on varied distances between the heating means and the surface of said deposition material. Thus, the heating means is moved downward (or the bottom wall) is moved upward by the moving means to maintain the distance between the heating means (or the substrate to be coated) and the surface of the deposition material at an initially-set value when the thickness of the deposition material is decreased.

The invention provides a method for improving an interface of an all-solid-state thin film secondary lithium ion battery positive electrode and an electrolytic layer thin film. The method includes: preparing a positive electrode material of a secondary lithium ion battery into a compact substrate, adopting plasma technology or a chemical-mechanical polishing method to treat one surface of the substrate, adopting a magnetron sputtering method to deposit a layer of same-composition positive electrode material on the treated surface, and adopting plasma to etch the surface to obtain the substratesurface with ideal surface low defect concentration. The method can further improve uniformity of the electrolytic thin film on the positive electrode material substrate, so that depositing thicknessof the electrolyte thin film is further reduced, and output current density and quick charging-discharging characteristics of the all-solid-state thin film secondary lithium ion battery are improved.

The invention discloses a method of improving the photoelectric properties of a heterojunction solar cell. A covering layer has the functions of surface antireflection, carrier conduction and electrode selective deposition mask, and the method comprises the following steps of: (a) preparing a heterojunction solar cell substrate, (b) depositing a metal seed layer gate, (c) depositing a covering layer in the non-gate region, (d) drying the covering layer, (e) electrochemically depositing a metal electrode in the gate region, (f) post-processing a covering layer, and (g) drying the cover layer. According to the method disclosed in the invention, the complexity of an electrochemical deposition metal electrode process can be obviously reduced, the polymer covering layer is used, the photoelectric property is obviously improved after treatment, the polymer covering layer can also be used as a transparent conductive film of the heterojunction solar cell, and, according to the method, the process of removing the mask by an electrochemical deposition electrode of a conventional heterojunction solar cell is avoided, the transparent conductive film can be used less or not used, the conversionefficiency of the heterojunction solar cell is improved, the production cost is reduced, and the method has remarkable advantages in industrial production.

The invention discloses a global (one-time) manufacturing method for contact metal of a source region and a drain region of a carbon nanotube device. The method comprises the following steps: an interlayer dielectric layer is deposited on a dummy gate structure, and flattening is carried out to remove the inclined side wall parts on the two sides of the top of the dummy gate structure; a dummy gate in a groove structure is removed; a gate dielectric, a metal gate and a lead metal layer are sequentially deposited, and flattening is carried out to further remove the inclined side wall parts on the two sides of the top of the gate so as to form side walls only having vertical side wall surfaces; a source-drain metal pattern is defined, a source-drain contact metal layer is deposited, and theresidual metal layer on the surface of the spacer is selectively removed; an etching stop layer and a second interlayer dielectric layer are sequentially deposited, and flattening is carried out; anda source-drain contact hole and a gate lead metal layer contact hole are formed and filled with metal. The method can eliminate the influence of the morphology of the inclined side walls on the two sides of the top of the gate on the deposition of the source-drain metal, and remarkably reduces the deposition thickness of the source-drain metal on the surfaces of the side walls.

The present invention disclosed the deposition source installed in a chamber, heated by applied electric power to transfer heat to a vapor deposition material received therein and applying a vaporized deposition material generated therein to a substrate to form deposition organic electroluminescent layers onto the substrate, and comprising a vessel consisted of a top plate on which a vapor efflux aperture is formed, a side wall, and a bottom wall; a heating means for supplying heat to the deposition material received in the vessel, the heating means being capable of moving vertically; and a means for moving the heating means (or the bottom wall), the moving means (or the bottom wall) being operated in response to the signal of a sensing means on varied distances between the heating means and the surface of said deposition material. Thus, the heating means is moved downward (or the bottom wall) is moved upward by the moving means to maintain the distance between the heating means (or the substrate to be coated) and the surface of the deposition material at an initially-set value when the thickness of the deposition material is decreased.

A composite, including a first semiconductor substrate that is secured by soldering material to at least one second semiconductor substrate, a eutectic being formed between the soldering material and the second semiconductor substrate and / or at least one layer possibly provided on the semiconductor substrate. It is provided that the eutectic is formed between the soldering material and a microstructure, which is formed in the region of contact with the soldering material on the second semiconductor substrate and / or the layer. Also described is a production method.

The invention provides a method for preparing a flash memory. The invention performs oxidation treatment on a semiconductor substrate formed with a tunnel oxide layer before forming a floating gate, so as to enhance the stability of the surface of the active region in contact with the tunnel oxide layer. Simultaneously, the present invention reduces the deposition thickness of the metal layer that prepares metal silicide and carries out the heat treatment that will form metal silicide in two stages, helps to strengthen the stability and the surface uniformity of metal silicide, wherein, the second heat treatment Phase is higher temperature and shorter than the first phase. The present invention uses the above method to prevent the metal silicide from irregularly corroding to the contact surface of the gate structure and the active region, thereby reducing the programming interference caused by the irregular erosion, achieving the purpose of suppressing the programming interference of the flash memory, and further avoiding The reliability of the drain region is reduced during cycle operation, while avoiding the data retention of the flash memory to generate tail bits.

The invention discloses an alkali metal doping treatment method for large-scale production of a copper-indium-gallium-selenium thin-film solar cell. The method sequentially comprises the following steps: (1) depositing a Mo back electrode layer; (2) depositing a layer of alkali metal halide; (3) co-evaporating In, Ga and sixth main group solid elementary substances; (4) co-evaporating Cu and sixthmain group solid elementary substances; (5) depositing a layer of alkali metal halide; (6) co-evaporating Cu and sixth main group solid elementary substances; (7) co-evaporating In, Ga and sixth maingroup solid elementary substances; (8) depositing a layer of alkali metal halide; (9) performing annealing treatment. According to the method, the adhesive force of the Mo layer and the CIGS layer can be effectively increased, the CIGS hole concentration is increased, the surface roughness of the thin film is reduced, the thickness of the CdS buffer layer is reduced, and the open-circuit voltageand the photoelectric conversion efficiency of the thin film solar cell are improved.

The invention provides a polysilicon etching method. Through processing a photoresist which is formed after photoresist patterning and a residual bottom antireflective coating (BARC) layer after etching by means of plasma which has advantages of high frequency, low pressure and zero bias voltage and comprises HBr, edges of the photoresist and the residual BARC layer are smoothed. Then, the residual photoresist and the BARC layer after processing by the plasma which comprises the HBr is used as a mask for etching a hard mask layer and a polysilicon layer on the upper surface of the semiconductor substrate, thereby settling a problem of rough line edge of the polysilicon. Furthermore, the surface of processed photoresist absorbs the plasma which comprises HBr and Cl2, and the property of the photoresist changes. Etching resistance is improved, and selectivity ratio to the hard mask is improved, thereby reducing deposition thickness of the photoresist layer, and furthermore reducing time and raw material consumed in depositing the photoresist. Namely the polysilicon etching method has advantages of reducing production cost, improving production efficiency and saving resource.

The invention provides a preparation method for a flash memory. Oxidation processing is performed on a semiconductor substrate with formation of a tunneling oxidation layer before formation of a floating gate so that stability of an active region surface contacted with the tunneling oxidation layer is enhanced. Meanwhile, deposition thickness of a metal layer for preparation of a metal silicide is reduced, and heat treatment for formation of the metal silicide is performed via two divided phases so that enhancement of stability and surface uniformity of the metal silicide is facilitated, wherein temperature of the second phase of heat treatment is higher than that of the first phase, and time of the second phase of heat treatment is shorter than that of the first phase. With application of the aforementioned method, the metal silicide can be prevented from irregularly eroding to the gate structure and the contact surface of the active region so that programming interference caused by irregular erosion can be reduced, an objective of suppressing programming interference of the flash memory is achieved, reduction of reliability of a drain region in cycle operation can be further avoided, and generation of tail bits of data retention of the flash memory can also be avoided.

The present invention discloses a method for manufacturing semiconductor device wherein a cleaning process of a buffer layer is performed prior to a formation of a nitride film. The cleaning process allows to maintain the deposition thickness of the nitride film even when the time between the formation of the buffer layer and the formation of the nitride film is long.

An apparatus and system for in-situ electropolishing and / or for in-situ electroforming a structural or functional reinforcement layer such as a sleeve of a selected metallic material on the internal surfaces of metallic tubular conduits are described. The apparatus and system can be employed on straight tubes, tube joints to different diameter tubes or face plates, tube elbows and other complex shapes encountered in piping systems. The apparatus includes components which can be independently manipulated and assembled on or near a degraded site and, after secured in place, form an electrolytic cell within the workpiece. The apparatus contains counter-electrodes which can be moved relative to the workpiece surface during the electroplating and / or electropolishing operation to provide flexibility in selecting and employing electropolishing process parameters and electroplating process parameters to design and optimize the surface roughness as well as the size, shape and properties of the electrodeposited reinforcing layer(s).

The invention discloses a copper-indium-gallium-selenium thin-film solar cell absorption layer surface treatment device which comprises a first cleaning chamber, a first air knife drying chamber, a chemical reaction chamber, a second air knife drying chamber, a second cleaning chamber and a heatingand drying chamber which are sequentially communicated, and each chamber is internally provided witha conveying roller way for conveying a substrate; plasma water spraying equipment is arranged above the conveying roller ways in the first cleaning chamber, and rolling brush cleaning equipment is arranged between the conveying roller ways at intervals; an air knife blow-drying machine is arranged at the upper part in the second air knife drying chamber; a chemical dissolving agent is stored in the chemical reaction chamber and is used for dissolving selenide and sulfide of the solar cell absorption layer; a drying fan is arranged in the heating and drying chamber. According to the treatment device, particles and burrs on the surface of the absorption layer can be simply and conveniently treated, and the surface appearance of the absorption layer is optimized.

The invention discloses a battery electrolyte containing an amine iodide additive and a preparation method of the battery electrolyte, and belongs to the technical field of battery materials. The electrolyte provided by the invention comprises an organic solvent, a lithium salt and an additive, wherein the additive comprises amine iodide. The anion I<-> of the amine iodide additive can form a solid electrolyte interface film containing LiI on the surface of metal lithium, hydrogen-bond interaction exists between amido cations and Li2S, an energy barrier of Li2S conversion can be reduced, and the utilization rate of an active substance sulfur is increased. According to the additive used in the invention, both anions and cations can act, and the acting angles are different, so that the efficiency of the electrolyte can be greatly improved, and the usage amount of the electrolyte can be reduced.

A conductive structure includes a contact plug extending through an insulating layer on a substrate, and first and second conductive lines extending alongside one another on the insulating layer. The first conductive line extends on the contact plug. A connecting line on the insulating layer extends between and electrically connects the first and second conductive lines. Related integrated circuit devices and fabrication methods are also discussed.

The invention discloses a bottom sludge coagulating reduction as well as a preparation method and application thereof. The bottom sludge coagulating reduction comprises the following ingredients in parts by weight: 25-35 parts of polyaluminium chloride, 25-35 parts of polyferric sulfate, 1-5 parts of sodium polyacrylate, 15-25 parts of calcium bentonite, 5-15 parts of dolomite, 5-10 parts of a bottom sludge conditioner and 1-5 parts of sodium ferrate. According to the coagulating reduction, in-situ, fast, efficient and stable coagulation, passivation and settling separation are performed on bottom sludge, suspended matters and the like in a governance process of urban black and odorous water bodies, so that the volume of dirty muddy water and pollutants such as COD (chemical oxygen demand), NH3-N, TP (total phosphorus), heavy metals and the like in the water bodies are quickly reduced, the transparency of the water bodies is purified, the self-purification capacity of the water bodies is enhanced, and the ecological restoration of the water bodies is promoted. Therefore, the purposes of landscape restoration and sludge and water co-governance are achieved; compared with the traditional black and odorous water body bottom sludge dredging technology, a technology adopting the bottom sludge coagulating reduction has outstanding advantages.

An aqueous bath for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy, the bath comprisinga source of nickel ions, and optionally a source of ions of at least one alloying metal,at least one buffering agent,at least one of a dimer of a compound of formula (I) or mixtures thereofwhereinR1 is a substituted or unsubstituted alkenyl group,R2 may be present or not, and if present R2 is a —(CH2)n-SO3− group, wherein n is an integer in the range of 1-6, and wherein one or more of the hydrogens in the group may be replaced by a substituent, preferably hydroxide; and a method for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy with said aqueous bath.

The invention provides a conductive structure and an integrated circuit assembly. The conductive structure includes a contact plug extending through an insulating layer on a substrate, and first and second conductive lines extending alongside one another on the insulating layer. The first conductive line extends on the contact plug. A connecting line on the insulating layer extends between and electrically connects the first and second conductive lines. Related integrated circuit devices and fabrication methods are also discussed.

The invention discloses a method for improving the photoelectric performance of a heterojunction solar cell. The covering layer has the functions of surface anti-reflection, carrier conduction, and electrode selective deposition mask. The steps are as follows: (a) preparing a heterojunction solar cell Battery substrate; (b) deposition of metal seed layer gate; (c) deposition of cover layer in non-gate area; (d) drying of cover layer; (e) electrochemical deposition of metal electrodes in gate area; (f) cover layer Post-processing; (g) drying the overlay. The method described in the present invention can significantly reduce the complexity of the electrochemical deposition metal electrode process, and the photoelectric performance of the polymer coating used after treatment is significantly improved, and can also be used as a transparent conductive film for heterojunction solar cells. The conventional heterojunction solar cell electrochemical deposition electrode removal mask process can also be used with less or no transparent conductive film, which is conducive to improving the conversion efficiency of heterojunction solar cells and reducing production costs, and has significant advantages in industrial production.

The invention relates to a slagging promoting device for an ultra-thick clay layer positive-cycle and a construction method of the slagging promoting device. The device comprises crushing steel wire rope bundles, steel wire rope clamps, a fixing pressing bar and a drill rod. The crushing steel wire rope bundles are composed of a plurality of steel wire ropes. Each steel wire rope is connected to be in a ring shape through the corresponding steel wire rope. The crushing steel wire rope bundles are fixed to the drill rod in sequence through the fixing pressing bar. The steel wire rope bundles are symmetrically arranged along the drill pipe in two rows. The construction method includes the steps that the discharging length of each steel wire rope is calculated according to the diameter of a pile hole; the steel wire rope clamps are used for locking all the steel wire ropes into ring shapes, and the position, on the surface of the drill rod, of each steel wire rope is marked; the fixing pressing bar is used for fixing the steel wire rope bundles to the drill rod in sequence according to the sizes of diffusion diameters; a common positive-cycle drilling machine is used for drilling to the position close to a clay layer; and a first section of a common drill pipe is replaced with the drill pipe manufactured in the step, and subsequent drilling construction work is conducted. According to the slagging promoting device, the slagging capability and the drilling efficiency of the positive-cycle construction technology in drilling in the ultra-thick clay layer are effectively improved.