Semiconductor device, manufacturing method thereof, and electronic equipment including the same

Abstract

Disclosed are a semiconductor device, a manufacturing method thereof, and electronic equipment including the device. According to an embodiment, a semiconductor device may include: a substrate; a first source / drain layer, a channel layer, and a second source / drain layer sequentially stacked on the substrate and adjacent to each other, and a gate layer is formed around the periphery of the channel layer. Stacking; wherein, at least one interface structure is formed in at least one of the first source / drain layer and the second source / drain layer, and the conduction band energy level and / or the valence band energy level are different on both sides of the interface structure .

Description

technical field [0001] The present application relates to the field of semiconductors, in particular, to a vertical semiconductor device, a method for manufacturing the same, and an electronic device including the semiconductor device. Background technique [0002] Horizontal semiconductor devices such as metal oxide semiconductor field effect transistors (MOSFETs) are widely used in various electronic devices. In a horizontal MOSFET, the source, gate, and drain of the transistor are arranged in a direction roughly parallel to the top surface of the substrate, but this arrangement makes it difficult to further reduce the device area in the horizontal direction, thus affecting electronic equipment. The degree of integration increases the difficulty of further reducing manufacturing costs. [0003] In order to solve the above problems, vertical devices have been adopted. In a vertical type MOSFET, the source, gate, and drain of the transistor are arranged in a direction subs...

AI Technical Summary

Problems solved by technology

But for vertical devices, on the one hand, if polycrystalline channel materials are used, the channel resistance will be greatly increased, making it difficult to stack multiple vertical devices, because this will lead to excessively high resistance

On the other hand, if a single crystal channel material is used, there are problems such as difficult control of the gate length and the relative position of the gate and the source and drain.

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