Rework process and method for sapphire single-sided polished section thickness badness

Abstract

The invention discloses a rework process and method for sapphire single-sided polished section thickness badness. The rework process is characterized in that polishing is performed on a single side ofa sapphire wafer through existing equipment. The rework process comprises the following steps of: performing graph surveying and mapping on the surface of the polished sapphire wafer; measuring and analyzing to obtain sapphire wafer surface thickness unit area difference (TTV, LTV, TIR and a pit); improving a polished wafer carrier plate, a polishing pad, a machine table disc surface and a polishing solution according to the principle of analyzing a sapphire wafer surface thickness unit area (TTV, LTV, TIR and the pit) value, reducing a product wafer scrap rate and increasing a wafer rework maximum utilization rate; and re-polishing a sapphire single-polished sheet through a regulated polishing method. The integral thickness unit area difference (TTV, LTV, TIR and the pit) of the polishedsapphire re-polished sheet is measured until the wafer thickness flatness requirements are achieved.

Description

technical field [0001] The present invention relates to a process and method for reworking a sapphire single-sided polished sheet with poor thickness, in particular to a process and method for reworking a defective sapphire single-sided polished sheet with large differences in thickness after removal Background technique [0002] With the vigorous development of silicon carbide, the material of the solar energy industry chain, the sapphire LED lighting industry has ushered in a golden period of development by virtue of its performance advantages in the field of energy saving and consumption reduction, and the market scale is rapidly expanding. [0003] With the advancement of technology, starting from 2015, the substrates for the mainstream production of high-brightness blue LEDs in domestic and foreign markets all use 4-inch sapphire flat sheets or patterned sapphire substrates (PSS). In order to improve the consistency of graphic products and the overall pass rate, we are ...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problem of poor surface thickness of existing sapphire single-polished wafers, the present invention provides a rework process and method for poor thickness of sapphire single-sided polished wafers. This invention is mainly used on single-polished machines. , according to the inner and outer thickness of the wafer surface, first fix the constant temperature of the large plate, and then trim the entire plate surface of the existing machine, and adjust the plate shape according to the thickness of the wafer surface. point) for calculation and trimming, and then fix the defective re-polished wafer on the wafer carrier, and the defective wafer position is fixed in the same direction (according to the same thickness defective factor), so that during the processing of the wafer, it is ensured that the area with poor wafer surface thickness has a higher At the same time, it also ensures the stability of the surface quality of the wafer thickness, which solves the shortcomings of the existing technology

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