Rework process and method for sapphire single-sided polished section thickness badness

A technology for single-sided polishing and sapphire wafers, applied to surface polishing machine tools, grinding/polishing equipment, manufacturing tools, etc.

Inactive Publication Date: 2019-02-19
ZHEJIANG EAST CRYSTAL BOLANTE PHOTOELECTRIC
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Problems solved by technology

[0005] Aiming at the problem of poor surface thickness of existing sapphire single-polished wafers, the present invention provides a rework process and method for poor thickness of sapphire single-sided polished wafers. This invention is mainly used on single-polished machines. , according to the inner and outer thickness of the wafer surface, first fix the constant temperature of the large plate, and then trim the entire plate surface of the existing machine, and adjust the plate shape according to the thickne

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  • Rework process and method for sapphire single-sided polished section thickness badness

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Embodiment Construction

[0014] specific implementation plan

[0015] Below in conjunction with accompanying drawing, the embodiment of the present invention is described:

[0016] Basic sapphire single-sided polished wafers with poor thickness rework steps: First, survey and map the polished sapphire wafers with poor thickness; through surveying and mapping analysis, the areas with poor inner and outer rings on the surface of the sapphire wafer thickness (TTV, LTV, TIR, pits); according to The numerical analysis of the poor surface thickness of the sapphire wafer combined with the principle of the maximum utilization of the wafer trims the surface of the polishing disk; finally, the adjusted polishing disk is used to face the sapphire wafer for single-sided polishing. After polishing, it is washed and dried with high temperature acid and alkali, and finally the polishing is measured. After the thickness of the sapphire wafer (TTV, LTV, TIR, pits), until the flatness requirements are met, a nano-scale...

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Abstract

The invention discloses a rework process and method for sapphire single-sided polished section thickness badness. The rework process is characterized in that polishing is performed on a single side ofa sapphire wafer through existing equipment. The rework process comprises the following steps of: performing graph surveying and mapping on the surface of the polished sapphire wafer; measuring and analyzing to obtain sapphire wafer surface thickness unit area difference (TTV, LTV, TIR and a pit); improving a polished wafer carrier plate, a polishing pad, a machine table disc surface and a polishing solution according to the principle of analyzing a sapphire wafer surface thickness unit area (TTV, LTV, TIR and the pit) value, reducing a product wafer scrap rate and increasing a wafer rework maximum utilization rate; and re-polishing a sapphire single-polished sheet through a regulated polishing method. The integral thickness unit area difference (TTV, LTV, TIR and the pit) of the polishedsapphire re-polished sheet is measured until the wafer thickness flatness requirements are achieved.

Description

technical field [0001] The present invention relates to a process and method for reworking a sapphire single-sided polished sheet with poor thickness, in particular to a process and method for reworking a defective sapphire single-sided polished sheet with large differences in thickness after removal Background technique [0002] With the vigorous development of silicon carbide, the material of the solar energy industry chain, the sapphire LED lighting industry has ushered in a golden period of development by virtue of its performance advantages in the field of energy saving and consumption reduction, and the market scale is rapidly expanding. [0003] With the advancement of technology, starting from 2015, the substrates for the mainstream production of high-brightness blue LEDs in domestic and foreign markets all use 4-inch sapphire flat sheets or patterned sapphire substrates (PSS). In order to improve the consistency of graphic products and the overall pass rate, we are ...

Claims

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Application Information

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IPC IPC(8): B24B29/02B24B1/00
CPCB24B29/02B24B1/00
Inventor 徐良占俊杰阳明益蓝文安刘建哲陈吉超余雅俊
Owner ZHEJIANG EAST CRYSTAL BOLANTE PHOTOELECTRIC
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