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Transverse photoelectric Q switch based on trigonal system and drive voltage reducing method and application thereof

A technology of trigonal crystal system and driving voltage, applied in circuits, lasers, electrical components, etc., can solve the problems of increasing the optical length of electro-optical crystals, increasing the cost of electro-optical switches and even lasers, and is conducive to miniaturized production, simplified design and The effect of volume and easy industrialization

Active Publication Date: 2019-02-19
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such a design needs to increase the optical length of the electro-optic crystal, and requires high-quality and large-sized electro-optic crystals, which puts forward higher requirements for the growth technology of electro-optic crystals, and increases the cost of electro-optic switches and even lasers.

Method used

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  • Transverse photoelectric Q switch based on trigonal system and drive voltage reducing method and application thereof
  • Transverse photoelectric Q switch based on trigonal system and drive voltage reducing method and application thereof
  • Transverse photoelectric Q switch based on trigonal system and drive voltage reducing method and application thereof

Examples

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Effect test

Embodiment 1

[0037] Embodiment 1: A barium metaborate electro-optic Q-switch switch with low driving voltage

[0038] A kind of electro-optic Q-switching switch, structure such as figure 1 As shown, a polarizer 1 and an electro-optic crystal device 2 are sequentially arranged along the optical path. The electro-optic crystal device 2 is an electro-optic crystal, and the material of the electro-optic crystal device 2 is barium metaborate. The X and Y axes, the light-passing surface is polished and coated with a dielectric film with a transmittance of more than 99% for the laser working wavelength, and the XZ surface is coated with a metal film 3, the metal film 3 is a Ti film, and the electro-optic crystal device in the light-passing direction 2 The length is 20mm.

Embodiment 2

[0039] Embodiment 2: A low-voltage driven lanthanum gallium silicate electro-optic Q-switching switch

[0040] According to an electro-optic Q-switching switch described in Embodiment 1, the difference is that the material of the electro-optic crystal device 2 is gallium lanthanum silicate; the light-passing surface of the electro-optic crystal device 2 is a square with a side length of 4 mm, and The two sides are parallel to the X and Y axes of the electro-optic crystal device 2, the light-transmitting surface is polished and coated with a dielectric film with a transmittance greater than 99% for the laser working wavelength, and the metal film 3 is coated on the XZ surface, and the metal film 3 is Au film, the length of the electro-optic crystal device 2 in the direction of light transmission is 40 mm.

Embodiment 3

[0041] Embodiment 3: A lithium niobate electro-optic Q-switched switch with low driving voltage

[0042] According to an electro-optic Q-switching switch described in Embodiment 1, the difference is that the material of the electro-optic crystal device 2 is lithium niobate, the light-passing surface of the electro-optic crystal device 2 is a square with a side length of 5 mm, and the two sides of the light-passing surface Two sides are parallel to the X and Y axes of the electro-optic crystal device 2, the light-transmitting surface is polished and coated with a dielectric film with a transmittance greater than 99% for the laser working wavelength, and the metal film 3 is coated on the XZ surface, and the metal film 3 is Ti film, in the direction of light transmission, the length of the electro-optic crystal device 2 is 25 mm.

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Abstract

The invention relates to a transverse photoelectric Q switch based on trigonal system and a drive voltage reducing method and application thereof. The transverse photoelectric Q switch comprises a polarizer and a photoelectric crystal device which are arranged sequentially along a light path; the photoelectric crystal device is a photoelectric crystal block which is trigonal; an included angle between a polarization direction of light before passing through the photoelectric crystal and X / Y direction of the photoelectric crystal is 45 degrees. The transverse photoelectric Q switch herein has low drive voltage that is 15-60% lower than quarter drive voltage of a traditional photoelectric Q switch, and the important demand of photoelectric devices with low voltage drive is met. The transverse photoelectric Q switch herein is simpler in design, has simpler cavity structure and smaller size as no quarter wave plate is used, is easy to produce in miniature form, helps simplifies the designand reduce the size of lasers, and has the advantages of good industrialization convenience and the like.

Description

technical field [0001] The invention relates to a lateral electro-optic Q-switching switch based on a trigonal crystal system and a method and application thereof for reducing driving voltage, belonging to the technical field of laser devices. Background technique [0002] High repetition frequency and narrow pulse width lasers are widely used in medical treatment, science and technology, and measurement, especially in the fields of national defense and national security such as laser ranging, laser fine processing, laser communication, and infrared countermeasures. need. Electro-optic Q-switching is a practical technology to directly generate high-repetition-frequency, narrow-pulse-width lasers. The key in the electro-optic Q-switching switch is the electro-optic crystal. Trigonal crystals include lithium niobate (LiNbO 3 , referred to as: LN), barium metaborate (β-BaB 2 o 4 , referred to as: β-BBO) and gallium lanthanum silicate (La 3 Ga 5 SiO 14 , referred to as: ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/115
CPCH01S3/115
Inventor 于浩海张怀金马世会王继扬
Owner SHANDONG UNIV
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