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Microchannel heat radiator and manufacturing method thereof

A technology of micro-channels and heat sinks, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of limited quantity, high process cost, and reduced circuit density to meet grounding requirements, Reduce processing difficulty and smooth the upper and lower surfaces

Active Publication Date: 2019-03-01
SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above-mentioned defects that the existing micro-channel heat sink cannot meet the grounding requirements of the high-frequency system or the processing of deep TSV holes is difficult, the process cost is high, the circuit density is reduced, and the quantity is limited, the present invention provides a micro-channel heat sink and its manufacturing method

Method used

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  • Microchannel heat radiator and manufacturing method thereof
  • Microchannel heat radiator and manufacturing method thereof
  • Microchannel heat radiator and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment approach

[0056] Such as Figure 1-10 Shown, a kind of micro-channel heat sink is provided with micro-channel (2), shunt network in it, and the surface is provided with liquid inlet and liquid outlet (3), and the outer surface of described micro-channel heat sink is provided with There is a metal layer (1).

[0057] In the above technical solution, by arranging the metal layer (1) on the surface of the micro-channel heat sink, it not only satisfies the grounding requirements of the high-frequency system well, but also avoids setting deep TSV holes on the micro-channel heat sink, reducing micro The processing difficulty and manufacturing cost of the runner heat sink ensure the integration density of the circuit and the reliability of the structure.

[0058] The micro-channel and shunt network can be in any shape, and the actual shape should be determined according to heat dissipation requirements. Exemplarily, the shape of the microchannel and the shunt network may be: serpentine, spir...

Embodiment

[0086] Such as Figure 1-10 As shown, a microchannel heat sink with a thickness of 400 μm:

[0087] The interior is provided with a micro-channel (2) and a distribution network, the micro-channel and the distribution network are serpentine, the width of the micro-channel (2) is 30 μm, and the depth is 250 μm; the lower surface is provided with a liquid inlet and an outlet The liquid inlet (3), the liquid inlet and the liquid outlet (3) are circular; the outer surface is provided with a metal layer (1), and the metal layer (1) is continuously distributed on the six micro-channel radiators. The surface is made of Au.

[0088] The manufacturing method is as follows:

[0089] 1) Provide two smooth silicon wafers;

[0090] 2) if image 3 As shown, a layer of SiO was grown on the surface of silicon wafer A and the back of silicon wafer B respectively. 2 , and use chemical mechanical polishing technology to control its surface roughness below 1nm;

[0091] 3) if Figure 4 As s...

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Abstract

The invention discloses a microchannel heat radiator. A microchannel and a shunting network are arranged in the microchannel heat radiator, a surface is provided with a liquid inlet and a liquid outlet, and an external surface of the microchannel is provided with a metal layer. According to the microchannel heat radiator provided by the invention, the surface of the microchannel heat radiator is provided with the metal layer, thus, a grounding requirement of a high-frequency system is satisfied well, arranging a deep TSV hole on the microchannel heat radiator is also avoided, processing difficulty and manufacturing cost of the microchannel heat radiator are reduced, and reliability of integration density of a circuit and reliability of a structure are guaranteed; with the metal layer, upper and lower surfaces of the microchannel heat radiator provided by the invention are flat and have no cavity, so, a plurality of high heat-flux density chips can be integrated on the surfaces of the microchannel heat radiator, and the circuits can be designed flexibly under the premise of guaranteeing heat dissipation performance of products.

Description

technical field [0001] The invention relates to the technical field of microelectronic heat dissipation, in particular to a microchannel heat sink and a manufacturing method thereof. Background technique [0002] Power chips are the core components of radio frequency microsystems, and the development of advanced semiconductor materials has continuously improved the performance of power chips. At present, the third-generation semiconductor technology has the characteristics of wide bandgap, can withstand higher operating junction temperature, and its power density can reach 30W / mm (much higher than 0.5W / mm of GaAs), which can make the output power of the electronic system 5 times larger, but the volume is reduced by half. However, in the microwave frequency range, the self-heating effect of the third-generation semiconductor devices is quite serious, and the output heat flux density of some multi-gate devices in the microwave frequency range even reaches the order of kilowat...

Claims

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Application Information

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IPC IPC(8): H01L23/373H01L23/473
CPCH01L23/3735H01L23/3736H01L23/473
Inventor 卢茜张剑向伟玮王文博李阳阳蒋苗苗
Owner SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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