Preparation method of high-dielectric-constant gate oxide amorphous IGZO thin film transistor

Abstract

The invention discloses a preparation method of a high-dielectric-constant gate oxide amorphous IGZO thin film transistor. Firstly, a layer of strontium titanate thin film with high dielectric property is prepared on a monocrystalline silicon substrate by utilizing a magnetron sputtering technology to serve as a gate oxide; then a layer of amorphous IGZO thin film with the semiconductor characteristic is prepared on an insulating barium stannate thin film; and finally, an ITO transparent conducting electrode is prepared through a magnetron sputtering technology so as to serve as a source electrode and a drain electrode of the transistor, wherein the silicon substrate serves as a grid electrode. The high-dielectric-constant strontium titanate thin film is adopted as the gate oxide insulating layer, so that the problem of overheating of the leakage current of the transistor caused by the traditional silicon oxide is effectively reduced, so that the stability and the service life of the transistor are improved and prolonged.

Description

technical field [0001] The invention belongs to the fields of electronic science and technology and thin film transistor technology, and in particular relates to a preparation method of a thin film transistor, in particular to a preparation method of a high dielectric constant gate oxide amorphous IGZO thin film transistor. Background technique [0002] With the rapid development of display technology, the requirements for input and output performance of thin film transistors are getting higher and higher. The technical development of thin film transistors has also gone through three technical stages: amorphous silicon thin film transistors, polycrystalline silicon thin film transistors, and amorphous oxide thin film transistors. . Traditional silicon-based thin film transistors use silicon oxide as the insulating layer material of the gate oxide. As the transistor density increases, the leakage current of the gate oxide silicon oxide will greatly increase. [0003] The die...

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Problems solved by technology

[0003] The dielectric constant of silicon oxide gate oxide used in existing silicon-based thin film transistors is 3.4. As the integration of transistors increases, more and more heat will be generated. If oxides with high dielectric constants such as titanic acid can be used Strontium (dielectric constant 300), will increase the integration of transistors while reducing the problem of excessive heat generation caused by transistor leakage current

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