44 results about "Barium stannate" patented technology

The invention belongs to the field of a lead-free piezoelectric material and discloses BCT-BZT-BST (barium calcium titanate-barium zirconate titanate-barium stannate titanate) ternary system lead-free piezoelectric ceramic. The BCT-BZT-BST ternary system lead-free piezoelectric ceramic is characterized by having the following material components: Ba0.8-xCaxTi0.8O3-0.1BaTi0.9Sn0.1O3-0.1BaTi0.8Zr0.2O3, wherein x is in the range of 0.005 to 0.06. The BCT-BZT-BST ternary system lead-free piezoelectric ceramic is prepared from industrial raw materials by adopting a conventional piezoelectric ceramic preparation technology. The system is a perovskite phase. When x is in the range of 0.005 to 0.04, the BCT-BZT-BST ternary system lead-free piezoelectric ceramic is in morphotropic phase boundary region, has excellent piezoelectric property, has a piezoelectric constant d33 value of 420pC / N and an electro-mechanical coupling coefficient of 44 percent, and has a stable preparation process and wide application prospect.

The invention discloses a BaSnO3 based multiphase electrolyte material and a preparation method thereof, belonging to the technical field of ceramic material. The preparation method comprises the following steps: carrying out Zn-Y codoping to obtain BaSn0.5Y0.46Zn0.04O2.73 which is easy to sinter and high in electric conductivity and chemical stability and is used as a substrate; and coating the surface of BaSn0.5Y0.46Zn0.04O2.73 uniformly with a second phase Ce0.8Sm0.2O2.9 through combination of a sol-gel method and ball milling, thus obtaining a nano multiphase material with a core-shell structure. According to the invention, based on the proton and oxygen iron rapid conduction principle of a two-phase interface, a proton-oxygen iron co-conduction BaSn0.5Y0.46Zn0.04O2.73 / Ce0.8Sm0.2O2.9 multiphase electrolyte material which is easy to sinter and high in electric conductivity and chemical stability is obtained.

The invention discloses a full-transparent resistive random access memory and application of barium stannate on the aspect of using the barium stannate as a transparent material with the stable resistance changing characteristic and belongs to the technical field of a semiconductor nonvolatile memory. According to the invention, the resistive material is a large energy gap semiconductor transparent oxide barium stannate (BaSnO3) thin film; the resistive random access memory consists of a lower electrode, a resistive storage layer arranged on the lower electrode and an upper electrode deposited on the resistive storage layer; the upper electrode and the lower electrode are an indium tin oxid transparent conductive thin film and a fluorine-doped indium oxide transparent conductive thin film; and the resistive storage layer is a barium stannate (BaSnO3) thin film. The transparent organic resistive random access memory provided by the invention has the advantages of good light transmission, high storage density, high stability and the like and has wide application prospect.

The invention discloses a photocatalyst taking barium stannate as a carrier to load cadmium sulfide quantum dots as well as a preparation method and application of the photocatalyst, wherein the supported photocatalyst is prepared by loading synthesized CdS QDs with negative charges on a BaSnO3 perovskite semiconductor carrier with light absorption and positive charges through electrostatic self-assembly. Compared with BaSnO3, the CdS QDs / BaSnO3 catalyst has the advantage that the performance and the stability of removing NO through photocatalysis under the condition of visible light and the selectivity of NO3<-> are obviously improved. According to the present invention, the CdS QDs are loaded on the BaSnO3 carrier through an electrostatic self-assembly method, so that the preparation method is simple and easy to implement and is more beneficial to popularization and application.

The invention discloses high-strength magnesium jade porcelain which is characterized by comprising the following substances in parts by weight: 35-50 parts of magnesium clay, 25-36 parts of frit, 3-7 parts of monocalcium phosphate, 2-9 parts of superphosphate, 10-18 parts of stearic acid, 5-8 parts of chlorinated paraffin, 5-8 parts of polyacrylate, 11-18 parts of aluminum oxide, 9-12 parts of silicon carbide, 20-46 parts of talc, 1-4 parts of barium stannate, 11-21 parts of calcium carbonate, 1-3.5 parts of sodium carboxymethylcellulose, 15-29 parts of magnesite, 20-30 parts of albite and 3-11 parts of magnesium carbonate. The high-strength magnesium jade porcelain has the beneficial effects that once-firing is realized, and the problem that the product generated by firing temperature of lots of adopted talc materials is low in regularity and thermal shock resistance is solved and improved. Moreover, reasonable raw materials and blank formula and the production process are the basis of realizing once-firing of the magnesium jade porcelain and are also key points of solving the problems of extruding and molding difficulty and low strength of the fired product.

The invention provides a barium stannate composite silicon oxide airgel powder and a preparation method thereof. The composition of the composite airgel is xSiO 2 +(1‑x)BaSnO 3 , wherein 0<x<1, the composite airgel includes silicon oxide airgel and barium stannate nanoparticles uniformly distributed in the silicon oxide airgel. Using silica airgel as a hard template, the barium stannate nanoparticles are evenly distributed in the silica airgel, which has a nanopore structure, which can prevent the agglomeration of barium stannate, so that the small size of nanocrystalline barium stannate can be fully utilized effects, surface / interface effects, etc.

The invention belongs to the field of a lead-free piezoelectric material and discloses BCT-BZT-BST (barium calcium titanate-barium zirconate titanate-barium stannate titanate) ternary system lead-free piezoelectric ceramic. The BCT-BZT-BST ternary system lead-free piezoelectric ceramic is characterized by having the following material components: Ba0.8-xCaxTi0.8O3-0.1BaTi0.9Sn0.1O3-0.1BaTi0.8Zr0.2O3, wherein x is in the range of 0.005 to 0.06. The BCT-BZT-BST ternary system lead-free piezoelectric ceramic is prepared from industrial raw materials by adopting a conventional piezoelectric ceramic preparation technology. The system is a perovskite phase. When x is in the range of 0.005 to 0.04, the BCT-BZT-BST ternary system lead-free piezoelectric ceramic is in morphotropic phase boundary region, has excellent piezoelectric property, has a piezoelectric constant d33 value of 420pC / N and an electro-mechanical coupling coefficient of 44 percent, and has a stable preparation process and wide application prospect.

The invention relates to a preparation method of a crystalline barium stannate film, in particular to a method for preparing the crystalline barium stannate film by using a magnetic field enhancement technology. The crystalline barium stannate film is obtained by depositing on a room-temperature substrate by using a substrate magnetic field enhancement type magnetron sputtering technology; and the crystallization process of the barium stannate film can be realized on various transparent and non-transparent materials such as transparent glass and silicon wafers. The method comprises the steps of 1, cleaning a substrate; 2, performing room-temperature magnetron sputtering coating to obtain an amorphous barium stannate film; 2.1, vacuumizing by using a mechanical pump and a molecular pump; 2.2, pre-sputtering a barium stannate ceramic target material for 10 minutes; 2.3, adjusting the radio frequency power to be within the range of 30-80 watts, and adjusting the gas atmosphere in the vacuum to be mixed gas of argon and oxygen, wherein the oxygen partial pressure ratio of the mixed gas is made to be 30-70%, and the vacuum degree is maintained to be 0.1-3 Pa; and 3, performing magnetron sputtering coating by using a room-temperature substrate magnetic field enhancement technology to obtain the crystalline barium stannate film.

The invention discloses a full-transparent resistive random access memory and application of barium stannate on the aspect of using the barium stannate as a transparent material with the stable resistance changing characteristic and belongs to the technical field of a semiconductor nonvolatile memory. According to the invention, the resistive material is a large energy gap semiconductor transparent oxide barium stannate (BaSnO3) thin film; the resistive random access memory consists of a lower electrode, a resistive storage layer arranged on the lower electrode and an upper electrode deposited on the resistive storage layer; the upper electrode and the lower electrode are an indium tin oxid transparent conductive thin film and a fluorine-doped indium oxide transparent conductive thin film; and the resistive storage layer is a barium stannate (BaSnO3) thin film. The transparent organic resistive random access memory provided by the invention has the advantages of good light transmission, high storage density, high stability and the like and has wide application prospect.

The present invention provides photoluminescent iron-doped barium stannate materials absorbing ultraviolet (UV) light and exhibiting strong near-infrared (NIR) luminescence. Such materials exhibit increased integrated photoluminescence intensity in comparison to known BaSnO3 and iron-doped barium stannate materials, and therefore they are particularly useful for the production of photoluminescent security ink compositions and transparent covert security features with improved anti-counterfeiting resistance that can be used for protection of documents and articles against counterfeit and illegal reproduction.