Full-transparent resistive random access memory and application of barium stannate on aspect of using barium stannate as transparent material with stable resistance changing characteristic

Abstract

The invention discloses a full-transparent resistive random access memory and application of barium stannate on the aspect of using the barium stannate as a transparent material with the stable resistance changing characteristic and belongs to the technical field of a semiconductor nonvolatile memory. According to the invention, the resistive material is a large energy gap semiconductor transparent oxide barium stannate (BaSnO3) thin film; the resistive random access memory consists of a lower electrode, a resistive storage layer arranged on the lower electrode and an upper electrode deposited on the resistive storage layer; the upper electrode and the lower electrode are an indium tin oxid transparent conductive thin film and a fluorine-doped indium oxide transparent conductive thin film; and the resistive storage layer is a barium stannate (BaSnO3) thin film. The transparent organic resistive random access memory provided by the invention has the advantages of good light transmission, high storage density, high stability and the like and has wide application prospect.

Description

technical field [0001] The invention relates to the application of barium stannate as a transparent material with stable resistive switching characteristics, and also relates to a fully transparent resistive switching memory, which belongs to the technical field of semiconductor non-volatile memory. Background technique [0002] At present, the size of some devices is smaller than 100nm, causing the semiconductor industry to face both technical and basic theoretical challenges. The miniaturization of electronic devices has become a central topic in the international semiconductor technology blueprint. In order to overcome the limitations of traditional semiconductor memory devices based on charge storage, various new types of nonvolatile memory devices have emerged, including phase change memory, polymer memory, magnetic memory and resistive memory. Among these new types of memory, Resistive random access memory (RRAM) has attracted more and more attention due to its excell...

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Problems solved by technology

The obtained memory is opaque due to the opacity of the substrate. In addition, even if some selected substrate materials are selected as transparent conductive glass, transparent conductive quartz or soft transparent conductive plastic, however, the opacity of the functional layer material makes the prepared memory The components do not have transparent characteristics, which greatly limits the application space of transparent resistive memory

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