Method for preparing crystalline barium stannate film by using magnetic field enhancement technology

Abstract

The invention relates to a preparation method of a crystalline barium stannate film, in particular to a method for preparing the crystalline barium stannate film by using a magnetic field enhancement technology. The crystalline barium stannate film is obtained by depositing on a room-temperature substrate by using a substrate magnetic field enhancement type magnetron sputtering technology; and the crystallization process of the barium stannate film can be realized on various transparent and non-transparent materials such as transparent glass and silicon wafers. The method comprises the steps of 1, cleaning a substrate; 2, performing room-temperature magnetron sputtering coating to obtain an amorphous barium stannate film; 2.1, vacuumizing by using a mechanical pump and a molecular pump; 2.2, pre-sputtering a barium stannate ceramic target material for 10 minutes; 2.3, adjusting the radio frequency power to be within the range of 30-80 watts, and adjusting the gas atmosphere in the vacuum to be mixed gas of argon and oxygen, wherein the oxygen partial pressure ratio of the mixed gas is made to be 30-70%, and the vacuum degree is maintained to be 0.1-3 Pa; and 3, performing magnetron sputtering coating by using a room-temperature substrate magnetic field enhancement technology to obtain the crystalline barium stannate film.

Description

technical field [0001] The invention relates to a method for preparing a crystalline barium stannate film, in particular to a method for preparing a crystalline barium stannate film by utilizing a magnetic field enhancement technique. Background technique [0002] In recent years, the electron mobility of barium stannate single crystal with perovskite structure at room temperature is as high as 320 cm 2 / V.S, has received widespread attention. If this potential perovskite barium stannate material is applied to thin film transistors and used as the active layer material of thin film transistors, the electron mobility of existing thin film transistors can be increased to tens of cm 2 / V.S, which will have obvious application prospects on high-resolution displays. [0003] The traditional preparation of crystalline barium stannate functional films requires high-temperature deposition methods, such as pulsed laser deposition methods, molecular beam epitaxy deposition methods, ...

AI Technical Summary

Problems solved by technology

[0003] The traditional preparation of crystalline barium stannate functional films requires high-temperature deposition methods, such as pulsed laser deposition methods, molecular beam epitaxy deposition methods, etc. The above two methods use expensive equipment, low deposition rates, and poor preparation uniformity. Strontium substrates cannot be used on a large scale, and the deposition temperature of strontium titanate substrates is usually above 800°C, which is not conducive to industrialization

This shows that above-mentioned two kinds of preparation crystalline state barium stannate functional film all are not suitable for the needs of industrialization

Images