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Etchant composition, and method of producing metal pattern and thin film transistor substrate using the same

A technology of composition and etchant, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve problems such as poor adhesion

Active Publication Date: 2019-03-05
SAMSUNG DISPLAY CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, copper is more resistant to oxidizing agents than aluminum or chromium, necessitating the use of etchants containing more vigorous oxidizing agents
[0006] In addition, copper has poor adhesion to glass substrates or to silicon insulating films, making it difficult to use copper as a single-layer film

Method used

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  • Etchant composition, and method of producing metal pattern and thin film transistor substrate using the same
  • Etchant composition, and method of producing metal pattern and thin film transistor substrate using the same
  • Etchant composition, and method of producing metal pattern and thin film transistor substrate using the same

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Embodiment Construction

[0030] Hereinafter, embodiments of the inventive concept will be described with reference to the accompanying drawings. In this specification, when an element (or region, layer, portion, etc.) is referred to as being "on," "connected to," or "coupled to" another element, it means that the element is directly connected / coupled to another element, or a third element may be disposed therebetween.

[0031] Like reference numerals refer to like elements. Also, in the drawings, the thickness, proportions, and dimensions of elements are exaggerated for effective description of their technical contexts. "And / or" includes all of one or more combinations that may be defined by the relevant configuration.

[0032] It will be understood that, although the terms first, second etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be ...

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Abstract

An etchant composition is provided comprising 10% to 20% by weight of hydrogen peroxide, 0.1% to 2% by weight of an azole-based compound, 0.1% to 10% by weight of a mineral acid compound, and 0.1% to5% by weight of water surface stabilizer, 0.01 wt% to 0.1 wt% of fluoride, 0.1 wt% to 10 wt% of the sulfate-based compound, and water contained in an amount such that the total weight of the etchant composition is 100 wt%. The etchant composition according to an embodiment of the inventive concept may be used to etch a metal film containing copper and a molybdenum-titanium alloy to form a metal pattern, or to fabricate a thin film transistor substrate.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2017-0112816 filed on September 4, 2017, the entire contents of which are incorporated herein by reference. technical field [0003] The present disclosure herein relates to etchant compositions and methods of fabricating metal patterns and thin film transistor substrates using the etchant compositions, and more particularly, to etchant compositions having improved tapered etch profiles and the use of The etchant composition is a method for manufacturing a metal pattern and a thin film transistor substrate. Background technique [0004] As the flat panel display industry demands high resolution, large area, and 3D displays, a demand for faster response times arises. In particular, it has been required to increase the electron moving speed in the channel part of the TFT structure. Therefore, low-resistance materials have been used to form wirings, ...

Claims

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Application Information

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IPC IPC(8): C23F1/18C23F1/26C23F1/02H01L21/306
CPCH01L21/30604C23F1/02C23F1/18C23F1/26C23F1/44G02F1/136286H01L27/124G02F1/136295
Inventor 梁熙星朴弘植郑锺鉉金相佑李大雨
Owner SAMSUNG DISPLAY CO LTD
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