Spin current magnetization reversal element and magnetic memory
A technology of magnetic memory and components, which is applied in the field of spin current magnetization reversal components and magnetic memory, can solve problems that have not been clarified, and achieve the effect of reducing the reversal current density
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no. 1 Embodiment approach
[0047] figure 1 It is a diagram schematically showing the structure of the spin current magnetization reversal element 100 according to the first embodiment of the present invention, and the spin current magnetization reversal element 100 includes: a first ferromagnetic metal layer capable of changing the direction of magnetization 101. A spin-orbit torque wiring layer 102 bonded to one surface of the first ferromagnetic metal layer 101 and extending in a direction intersecting the normal direction (z direction) of the first ferromagnetic metal layer 101 . Here, a case where the spin-orbit torque wiring layer 102 extends in a direction (x direction) perpendicular to the normal direction of the first ferromagnetic metal layer 101 is exemplified.
[0048] figure 1 (a) is a plan view when the spin current magnetization inversion element 100 is viewed from the first ferromagnetic metal layer 101 side. figure 1 (b) is a cross-sectional view when the spin current magnetization rev...
no. 2 Embodiment approach
[0076] image 3 It is a perspective view schematically showing the structure of the spin current magnetization reversal element 200 according to the second embodiment of the present invention. The spin current magnetization reversal element 200 is formed by sequentially stacking the first ferromagnetic metal layer 201, the nonmagnetic layer 203, the second ferromagnetic metal layer 204, and the wiring layer 205 on the spin-orbit torque wiring layer 202. . It further includes a first power source 207 for flowing current in the lamination direction D1 of the magnetoresistance effect element 206 composed of the above three layers 201, 203, and 204, and a first power supply 207 for flowing current in the longitudinal direction of the spin-orbit torque wiring layer 202. The second power source 208 flowing through D2. The magnetoresistance effect element 206 is supported by the substrate 209 via the wiring layer 205 .
[0077] The spin current magnetization inversion element 200 ca...
Embodiment 1
[0124] A magnetoresistance effect element including the spin current magnetization inversion element of the present invention was produced by the method described above. First, after forming the base layer on the base substrate by the sputtering method, the spin-orbit torque wiring made of Pt is formed by the sputtering method using Ar while irradiating Ar ions using the ion gun assist method. Floor. Continuing with the ion implantation method, B (10 atm%) as a light element was added to the processed spin-orbit torque wiring layer.
[0125] Next, a first ferromagnetic metal layer, a nonmagnetic layer, and a second ferromagnetic metal layer are sequentially stacked on the spin-orbit torque wiring layer containing light element B and rare gas element Ar by sputtering to form Functional part of the magnetoresistive element. CoFeB was used as the material of the first ferromagnetic metal layer. As the non-magnetic material, MgO was used. As the material of the second ferromag...
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