SiC Schottky diode free of injection terminal structure and preparation method of diode
A Schottky diode and injection-type technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as high price, high production equipment requirements, and sample lattice damage, so as to reduce requirements and avoid Lattice damage, economic cost saving effect
Inactive Publication Date: 2019-03-12
QINHUANGDAO JINGHE SCI & TECH RES INST CO LTD
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Problems solved by technology
However, on the one hand, this process is expensive and requires high production equipment; on the other hand, it also brings unnecessary lattice damage to the sample.
Method used
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Embodiment 1
[0041] See figure 2 , figure 2 A schematic flowchart of a method for fabricating a SiC Schottky diode without an implanted termination structure provided by an embodiment of the present invention.
[0042] An embodiment of the present invention provides a method for preparing a non-injection junction terminal structure suitable for SiC power devices, which specifically includes the following steps:
[0043] Step 1: forming a 4H-SiC drift layer on the 4H-SiC substrate.
[0044] The growth thickness on the 4H-SiC substrate is 10-30 μm, the doping ions are N ions, and the doping concentration is 5×10 14 cm -3 ~1×10 16 cm -3 N-type 4H-SiC drift layer.
[0045] It should be noted that before growing the 4H-SiC drift layer, the 4H-SiC substrate needs to be cleaned by standard RCA. The purpose of cleaning is to remove the natural oxide and other impurities on the 4H-SiC substrate.
[0046] Step 2: Form SiO on the 4H-SiC drift layer 2 Boron-doped latex source layer.
[0047...
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The invention relates to a SiC Schottky diode free of an injection terminal structure and a preparation method of the diode. The preparation method comprises the following steps: a 4H-SiC drift layeris formed on a 4H-SiC substrate; a SiO2 boron-doped latex source layer is formed on the 4H-SiC drift layer; the SiO2 boron-doped latex source layer is etched, and part of the SiO2 boron-doped latex source layer is reserved on the 4H-SiC drift layer; a first passivation layer is formed on the SiO2 boron-doped latex source layer and the 4H-SiC drift layer; an ohmic contact metal layer is prepared below a 4H-SiC substrate; the first passivation layer and the SiO2 boron-doped latex source layer are etched to expose the 4H-SiC drift layer in a partial region, and A Schottky contact metal layer is prepared on the 4H-SiC drift layer; a first contact layer is formed on the Schottky contact metal layer; a second contact layer is formed below the ohmic contact metal layer; and a second passivation layer is formed on the first passivation layer and part of the first contact layer so as to complete the preparation of the SiC Schottky diode. According to the Schottky diode, the lattice damage to the diode caused by ion injection is avoided.
Description
technical field [0001] The invention belongs to the field of semiconductor devices, and in particular relates to a SiC Schottky diode without an injection-type terminal structure and a preparation method thereof. Background technique [0002] Silicon carbide (Silicon Carbide, referred to as SiC), as a wide bandgap semiconductor material, not only has high breakdown electric field strength, good thermal stability, but also has the characteristics of high carrier saturation drift velocity and high thermal conductivity. It has broad application prospects in the fields of high-frequency, high-power devices and integrated circuit production. [0003] Due to the discontinuity of the device at the P-N junction or Schottky junction, and the curvature at the corner of the junction, the surface electric force lines are dense, and the electric field strength outside the junction is higher than that in the body, which is particularly worthy of attention in silicon carbide high-voltage p...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L21/329H01L21/04H01L29/06H01L29/872
CPCH01L21/0455H01L29/0684H01L29/6606H01L29/872
Inventor 邵锦文侯同晓孙致祥贾仁需元磊张秋洁刘学松
Owner QINHUANGDAO JINGHE SCI & TECH RES INST CO LTD