Low noise amplifier chip package structure and satellite tuner circuit

A technology of chip packaging structure and low noise amplifier, which is applied in circuits, TVs, color TVs, etc., can solve problems such as increasing design cost and design time, hindering the miniaturization of integrated circuits, and increasing receiver area, and achieves design area and cost. And the effect of reducing design time, reducing design cost and design time, and improving cost performance

Active Publication Date: 2020-11-27
隔空微电子(广州)有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the traditional low-noise amplifier chip SOD-4 packaging method has the defects of large packaging area, high cost and high noise
Moreover, the traditional low-noise amplifier chip SOD-4 packaging method needs to use two low-noise amplifier chip packaging structures to process the vertically polarized signal and the horizontally polarized signal respectively in the application of the Ku-band satellite TV tuner, and Peripheral circuits need to be designed separately for vertical polarization and horizontal polarization, which greatly increases the design cost and design time, and greatly increases the area of ​​the receiver, hinders the miniaturization of integrated circuits, and brings many disadvantages

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low noise amplifier chip package structure and satellite tuner circuit
  • Low noise amplifier chip package structure and satellite tuner circuit
  • Low noise amplifier chip package structure and satellite tuner circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The specific implementation of the low noise amplifier chip package structure 10 and the satellite tuner circuit provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0025] Please refer to figure 1 , is a structural schematic diagram of a low noise amplifier chip package structure 10 according to a specific embodiment of the present invention.

[0026] The low noise amplifier chip packaging structure 10 includes: a lead frame, a first die 121 and a second die 122 , and an encapsulant 100 .

[0027] The lead frame includes a die layout area 110 and at least six pins placed around the die layout area 110 . In this specific implementation manner, the low noise amplifier chip package structure 10 includes 6 pins, respectively pin 1 to pin 6 , which are symmetrically distributed on opposite sides of the die layout area 110 . In other specific embodiments, according to the structure of the packaged chip inside th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to a low-noise amplifier chip packaging structure and a satellite tuner circuit, the packaging structure includes: a lead frame, including a bare chip layout area and at least six pins, the at least six pins surround the The die layout area is placed; the first die and the second die are placed in the die layout area, and the die layout area is electrically connected to at least two pins, and the first die includes a first FET structure, the second die includes a second FET structure, and the sources of the first FET structure and the second FET structure are electrically connected to the die layout area through wires, the first FET structure and The gate and the drain of the second FET structure are respectively electrically connected to different pins isolated from the layout area of ​​the die through wires. The package structure of the low noise amplifier chip can improve the integration degree of the satellite tuner circuit.

Description

technical field [0001] The invention relates to the technical field of chip packaging, in particular to a low-noise amplifier chip packaging structure and a satellite tuner circuit. Background technique [0002] With the rapid development of information technology and the rapid development of integrated circuits, the most important and core low-noise amplifier technology in integrated circuits has also been greatly developed. With the rapid development of satellite technology in recent years, Ku-band satellite TV can be seen everywhere and plays an increasingly important role in people's daily entertainment life. People are increasingly inseparable from the variety of satellite TV. [0003] The low-noise amplifier is located at the front end of the receiver, and its main function is to amplify weak signals, which plays a vital role in reducing noise interference and improving the performance of the entire receiver. Therefore, low noise amplifiers have always been the key mi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/31H01L23/495H04N5/50H04N7/20
CPCH04N5/50H04N7/20H01L23/31H01L23/495H01L2924/181H01L2224/0603H01L2224/48091H01L2224/48247H01L2224/48257H01L2924/00014H01L2924/00012
Inventor 林水洋宋颖徐乃昊周智何德宽王志高
Owner 隔空微电子(广州)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products