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Quantum dot light-emitting diode and preparation method thereof, and display panel

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., to achieve the effect of weakening the interface potential gradient and eliminating the influence of the interface potential

Inactive Publication Date: 2019-03-22
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, designing organic hole transport compounds with deeper energy levels to match the deeper valence bands of quantum dots remains an important research difficulty and challenge.

Method used

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  • Quantum dot light-emitting diode and preparation method thereof, and display panel
  • Quantum dot light-emitting diode and preparation method thereof, and display panel

Examples

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Embodiment 1

[0043] combine figure 2 , to illustrate this embodiment. First, clean the ITO glass with isopropanol, acetone, etc., and irradiate with an ultraviolet cleaning machine to eliminate dust and organic matter on the glass surface, as the cathode 1 . Zinc oxide nanoparticles are spin-coated and heated at 80-120 degrees to form a film as the electron transport layer 2.

[0044] Amine dendrimers, such as polyamides, can be chosen as electron blocking compounds 31 . The polyamide solution is spin-coated on the electron transport layer 2, and heated at 80-120 degrees to form a film. A low boiling point solution comprising surface ligands containing quantum dot CdSe / ZnS materials 32 containing acid functional groups, such as n-hexane or n-octane solutions comprising quantum dot materials 32, is spin-coated onto the film comprising electron blocking compounds 31, and Dry at 80-120 degrees to form a film.

[0045] A long-chain amine compound, such as dodecylamine, can be selected as ...

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Abstract

The invention provides a method of preparing a quantum dot light-emitting diode. The method comprises steps of forming a cathode, forming an electron transport layer, forming a light emitting layer, forming a hole transport layer, and forming an anode. The step of forming a light emitting layer is implemented as follows: forming a coating including an electron barrier compound next to the electrontransport layer; forming a coating containing a quantum dot material on the surface of the coating containing the electron barrier compound; and / or forming a coating containing a hole transport compound on the surface of the coating containing the quantum dot material. The electron barrier compound and the hole transport compound make ligand exchange with the surface ligand of the quantum dot material. In addition, the invention also provides a quantum dot light-emitting diode. According to the quantum dot light-emitting diode provided by the invention, the electron transport rate is reducedand / or the hole transport rate is increased to regulate the injection balance of electrons and holes and improve the carrier recombination rate of the QLED device; and thus the luminous efficiency ofthe QLED device is improved.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light emitting diode, a preparation method of the quantum dot light emitting diode, and a display panel. Background technique [0002] Fluorescent quantum dots are an important fluorescent nanomaterial. Has excellent physical, chemical and optical properties. For example, it has the advantages of wide absorption spectrum, narrow emission spectrum, high quantum yield, and good fluorescence stability. With their lower-cost solution-based methods, quantum dots are widely used in bioimaging, biosensors, light-emitting diodes (LEDs), and solar cells. [0003] Quantum dot light-emitting diode (QLED) applications require high device efficiency. Organic / inorganic hybrid QLED device structures proposed in recent years usually employ ZnO nanoparticles as the electron injection layer. However, the relatively large energy level difference between the quantum do...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/15H10K50/16H10K71/00
Inventor 张爱迪张东东
Owner BOE TECH GRP CO LTD
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