A nanowire-coupled quantum dot structure and its preparation method

Abstract

The invention discloses a nanowire-coupled quantum dot structure and a preparation method thereof. Nanowires are grown on a growth substrate to form a nanowire substrate, then a quantum dot structureis grown, the lateral dimension is reduced from a sidewall by in-situ thermal evaporation treatment to obtain a reconstructed quantum dot structure, and finally a repair layer is grown in situ. The longitudinal dimension of a quantum dot of the present invention can be precisely controlled in initial epitaxial growth, and the lateral dimension can be effectively controlled in a reconstitution process based on anisotropic thermal evaporation. The lateral dimension of a reconstructed quantum dot is regulated through the anisotropic thermal evaporation, the regulation of the lateral dimension ofthe nanowires can be broken, and even the reconstructed quantum dot with an extreme size (10nm) can be achieved. The reconstructed quantum dot is processed by using the anisotropic thermal evaporation, the process is simple, the cost is low, the scalability is high, the reproducibility is high, the batch preparation can be achieved, and the efficient preparation of a three-dimensional strongly constrained nanowire-coupled quantum dot structure is promoted.

Description

technical field [0001] The invention relates to a preparation technology of quantum dots, in particular to a nanowire-coupled quantum dot structure and a preparation method thereof. Background technique [0002] Known as "atom-like", semiconductor quantum dots have unique physical and chemical properties. In recent years, they have attracted much attention in many research fields such as physics, chemistry, biology and materials, and have become a key material for interdisciplinary research. The extreme size of quantum dots will lead to quantum confinement effects, macroscopic tunneling effects and surface / interface state effects, and derive low-dimensional physical properties different from macroscopic systems, in quantum communications, nonlinear optics, catalysis, medical and functional materials, etc. It has broad application prospects. With the development of science and technology, the preparation methods of semiconductor quantum dots are no longer limited to chemical...

AI Technical Summary

Problems solved by technology

[0003] The reported quantum dot structures directly grown on nanowires can be divided into two types: tip quantum dots and small-sized smooth top surface quantum dots, which face the problems of unavoidable tip sidewall epitaxy and uncontrollable lateral size of the smooth top surface, respectively. This leads to the fact that the lateral size of quantum dots is heavily dependent on the diameter of the nanowire (usually greater than 50nm). Although its vertical size can be precisely controlled by epitaxy, this type of quantum dot structure is not a three-dimensional strongly confined structure in the strict sense.

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