Method for preparing film transistor array substrate

Abstract

The invention discloses a method for preparing a film transistor array substrate. The method comprises steps that after a Cu metal film layer is formed on a gate insulation layer, depositing a C filmlayer on the Cu metal film layer is performed before the yellow light process and the etching process. The method is advantaged in that the Cu film is isolated from the outer part, so the Cu film is prevented from being oxidized in the subsequent yellow light process and the subsequent etching process, Cu film surface resistivity is reduced, an ESD phenomenon generated by the Cu film is avoided, and the display effect of the film transistor array substrate is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for preparing a thin film transistor array substrate. Background technique [0002] With the development of flat panel display technology, people's pursuit of display size, resolution and picture refresh rate is getting higher and higher, so copper is used instead of aluminum as the conductive metal material. [0003] In the existing array substrate process method, after the Cu film is deposited, after the yellow light process and the etching process, it is exposed to the air, and the Cu on the surface layer will be partially oxidized, and the Cu film is exposed to the air for more than 30 minutes. Its surface resistivity will increase by more than 30%, which will cause the resistivity of Cu line to increase; and the CuO produced on the Cu film x and Cu(OH) x It will lead to Electro-Static discharge (ESD) phenomenon and affect the display effect of TFT ...

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Problems solved by technology

[0003] In the existing array substrate process method, after the Cu film is deposited, after the yellow light process and the etching process, it is exposed to the air, and the Cu on the surface layer will be partially oxidized, and the Cu film is exposed to the air for more than 30 minutes. Its surface resistivity will increase by more than 30%, which will cause the resistivity of Cu line to increase; and the CuO produced on the Cu film x and Cu(OH) x It will lead to Electro-Static discharge (ESD) phenomenon and affect the display effect of TFT devices; the thicker the Cu film, the larger the grain size, the larger the surface roughness, and the larger the gaps in the grain boundaries , so in the follow-up process, there will be some O 2 and H 2 O penetrates into the film layer along the grain boundary gap, accelerates the oxidation of the Cu film on the surface, produces electrostatic breakdown or local parasitic capacitance, and further affects the display effect of TFT devices

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