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Voltage regulatable anisotropic magnetoresistive sensor and manufacturing method thereof

An anisotropic magnetic and sensor technology, which is applied in the fields of magnetic field controlled resistors, manufacturing/processing of electromagnetic devices, parts of electromagnetic equipment, etc. Large-scale industrial production and application, low cost, and simple preparation process

Inactive Publication Date: 2019-03-29
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, neither of these two types of magnetoresistive sensors can achieve voltage regulation of the rate of change of magnetoresistance, and many practical applications urgently need magnetoresistive sensor devices with a rate of change of magnetoresistance that can be adjusted by voltage.

Method used

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  • Voltage regulatable anisotropic magnetoresistive sensor and manufacturing method thereof
  • Voltage regulatable anisotropic magnetoresistive sensor and manufacturing method thereof

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Embodiment

[0021] Such as figure 1 As shown, it is a schematic structural diagram of an anisotropic magnetoresistive sensor with adjustable voltage provided by the embodiment of the present invention; the anisotropic magnetoresistive sensor of the embodiment is a single crystal silicon substrate 1, a non-magnetic metal An oxide film 2, a magnetic control layer 3, a magnetic response layer 4 and a non-magnetic heavy metal film 5. Among them, the interface between the magnetic control layer 3 and the non-magnetic metal oxide film 2 undergoes an oxidation reaction of oxygen ion migration, and the 3d orbital electrons of the magnetic atoms are hybridized with the 2p orbital electrons of the oxygen ions, so that the magnetic control layer 3 is in a ferromagnetic state. In the transition stage of the ferromagnetic state, there is an exchange coupling effect with the magnetic response layer 4 . When an out-of-plane voltage is applied, the degree of oxidation reaction between the magnetic atoms...

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Abstract

The invention provides a voltage regulatable anisotropic magnetoresistive sensor and a manufacturing method thereof, and belong to the technical field of spinning electron sensors. A magnetoresistivesensor includes a substrate, and a multilayer film and a nonmagnetic heavy metal film formed on [nonmagnetic metal oxide film / magnetic regulation layer / magnetic response layer]n on the substrate in sequence, wherein n>=1. The voltage regulatable anisotropic magnetoresistive sensor has characteristics of simultaneous regulation of magnetic field detection range and magnetoresistance change rate while achieving good sensing characteristics, and can be widely applied to fields of rotational speed control, angle control, magnetic field detection, and magnetic switches and other intelligent controlfields.

Description

technical field [0001] The invention belongs to the technical field of spintronic sensors, and in particular relates to an anisotropic magnetoresistive sensor with adjustable voltage and a preparation method thereof. Background technique [0002] With the advancement of science and technology and the continuous development of the information society, some traditional industries, such as industry, agriculture, information industry and other fields, have begun to rapidly change from the manual operation mode to the artificial intelligence and precision operation mode. At this time, the demand for smart devices has risen sharply, and the demand for smart monitoring sensors has also increased rapidly. At the same time, the complexity of the working environment makes the sensor subject to more and more interference factors. The fixed and uncontrollable functions of the sensor limit the wide application of assembly equipment. Therefore, it is particularly important to find a senso...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/02H01L43/12
CPCH10N50/80H10N50/10H10N50/01
Inventor 金立川何昱杰张岱南贾侃成张怀武唐晓莉钟智勇白飞明
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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