Dual-band high-efficiency inverse class F power amplifier
A power amplifier, dual-band technology, used in amplifiers, amplifiers with semiconductor devices/discharge tubes, improving amplifiers to improve efficiency, etc. Efficiency, simplified circuit structure, effect of simplified complexity
Active Publication Date: 2019-03-29
TIANJIN UNIV
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Problems solved by technology
[0004]
However, currently available dual-band inverse class-F PAs do not achieve excellent power-added efficiency (PAE) performance
Mainly due to the following reasons: First, the existing dual-band inverse Class F power amplifier circuit has a complicated structure, and cannot control the second harmonic and the third harmonic of the two working frequency bands at the same time, and the harmonic control circuit has a great impact on the power amplifier. The choice of operating frequency band is limited; secondly, the state of the second harmonic open circuit and the third harmonic short circuit of the intrinsic drain terminal of the transistor will also be affected by the parasitic parameters of the transistor itself, thus affecting the efficiency of the dual-band inverse class F power amplifier
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[0014] The specific implementation manner of the present invention will be described in detail below in conjunction with the accompanying drawings and preferred embodiments.
[0015] A dual-band high-efficiency inverse class F power amplifier provided by the present invention has a block diagram as figure 1 As shown, the transistor input terminal is composed of RC stabilization circuit, dual-band gate DC bias circuit and dual-band input matching circuit; the transistor output terminal is composed of a new harmonic control circuit, a dual-band drain DC circuit with harmonic control function Bias circuit and dual-band output matching circuit constitute.
[0016] figure 2 Shown is the low frequency band fundamental f 1 , high frequency band fundamental wave f 2 Circuit diagram of a dual-band high-efficiency inverse class-F power amplifier. Both the dual-band input matching circuit and the dual-band output matching circuit are composed of three series-connected transmission l...
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The invention relates to the technical field of power amplifiers, and in particular to a dual-band high-efficiency inverse class F power amplifier. A dual-band input matching circuit provides a function of matching optimal source impedance of a transistor with 50 ohm, the dual-band input matching circuit is respectively connected with an RC stabilizing circuit and a dual-band gate DC bias circuit,the dual-band gate DC bias circuit provides a conditions for a fundamental wave open circuit and a DC short circuit at two working frequency bands f1 and f2, and the RC stabilizing circuit is connected with an input end of the transistor; and a novel novel harmonic control circuit is connected with an output end of the transistor, and the output end of the novel harmonic control circuit is respectively connected with a dual-band drain DC bias circuit and a dual-band output matching circuit. The amplifier effectively simplifies the complexity of the circuit structure while satisfying the feasibility of the dual-band drain bias circuit.
Description
technical field [0001] The invention relates to the technical field of power amplifiers, in particular to a dual-band high-efficiency inverse class F power amplifier. Background technique [0002] With the further development of wireless communication systems, all components of the RF transmitter need to be able to process signals of multiple modes and multiple frequency bands simultaneously. As the most critical and energy-consuming module in the radio frequency transmitter, the power amplifier also needs to have the ability to work in multi-mode and multi-band. Therefore, the design of high-efficiency multi-band power amplifiers has become a hot spot in the field of power amplifier research, and high-efficiency dual-band power amplifiers are one of the most basic types. [0003] As one of the high-efficiency power amplifiers, the inverse class F power amplifier works opposite to the class F power amplifier. The harmonic control circuit of the inverse class F power amplifi...
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Patent Timeline
Login to View More IPC IPC(8): H03F3/217H03F1/02H03F1/56
CPCH03F1/0205H03F1/565H03F3/2176Y02D30/70
Inventor 马建国邹浩傅海鹏周绍华张新
Owner TIANJIN UNIV