A Method for Extracting Radiation Defects from Linear Circuits

A linear circuit and extraction method technology, applied in the direction of electronic circuit testing, measuring electricity, measuring electrical variables, etc., can solve problems such as inability to separate discrete devices, achieve enrichment of low dose rate enhancement effects, reduce quantity, improve speed and accuracy Effect

Active Publication Date: 2021-12-14
HARBIN INST OF TECH +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention aims to propose a linear circuit radiation defect extraction method to solve the problem that the discrete devices in the linear circuit cannot be independently

Method used

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  • A Method for Extracting Radiation Defects from Linear Circuits
  • A Method for Extracting Radiation Defects from Linear Circuits
  • A Method for Extracting Radiation Defects from Linear Circuits

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Embodiment 1

[0045] Such as figure 1 As shown, it is; Wherein, the linear circuit radiation defect extraction method includes:

[0046] Step 100, analyzing the linear circuit to determine the discrete device to be separated;

[0047] Analyze the linear circuit. Under the influence of external radiation, the overall performance of the linear circuit itself degrades, and the circuit parameters change greatly. Through the analysis of the linear circuit, the purpose is to preliminarily determine that the large change in parameters may be due to the linear circuit. Which discrete devices are caused by these discrete devices, and these discrete devices that may affect large changes in parameters are discrete devices that need to be independently extracted for defects, that is, discrete devices to be separated.

[0048] Step 200, cutting and separating the discrete device to be separated;

[0049] By cutting, the discrete devices to be separated are separated, so that the separated discrete dev...

Embodiment 2

[0092] The difference between this embodiment and the above-mentioned linear circuit radiation defect extraction method is that the linear circuit 7J139 is taken as an example in this embodiment to describe the linear circuit radiation defect extraction method.

[0093] The defect extraction process using linear circuits is as follows:

[0094] (1) Clarify the size of the circuit die (discrete device size), the die size of 7J139 is: 1.03mm×1.00mm×0.32mm, the layout of the die is as follows Figure 6 shown.

[0095] (2) Label the internal units of the die and determine the schematic diagram. The die layout after the label is as follows Figure 7 As shown (wherein, the labels in the figure are for distinguishing during the radiation defect extraction process, and are not the reference signs of this application), for the 7J139 circuit, there are 14 lead-out terminals, 8 vertical PNP tubes, and horizontal PNP tubes. There are 17 tubes, 8 diodes formed by horizontal PNP tubes, 1...

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Abstract

The present invention provides a method for extracting radiation defects in linear circuits, which includes: step 100, analyzing the linear circuit to determine the discrete device to be separated; step 200, cutting and separating the discrete device to be separated; step 300, testing The electrical performance of the separated discrete device is screened; step 400, extracting electrodes from the screened discrete device; step 500, performing defect testing on the discrete device through the extracted electrode. The radiation defect extraction method of the linear circuit in the present invention separates the discrete devices in the linear circuit by means of cutting and screening, and leads out the electrodes, so that the discrete devices in the linear circuit can be independently tested for defects, thereby enriching the present invention. Some researches on the enhanced effect of low dose rate can achieve better research results.

Description

technical field [0001] The invention relates to the technical field of radiation defect extraction, in particular to a method for extracting radiation defects of a linear circuit. Background technique [0002] Bipolar device This circuit is very sensitive to space radiation effects such as ionization effect and displacement effect, especially the enhanced low dose rate effect (ELDRS: Enhanced Low Dose Rate Sensitivity). Low dose rate enhancement effect means that under the same total dose irradiation conditions, the degree of degradation at the end of low dose rate irradiation is higher than that of high dose rate irradiation and the room temperature annealing time after irradiation is the same as that of low dose rate irradiation. To a great extent. Due to the low dose rate environment in space, the ELDRS performance of the bipolar device circuit will directly affect the on-orbit life and reliability of the satellite. Therefore, the ELDRS effect of bipolar circuits must b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/00G01R31/28
CPCG01R31/2619
Inventor 李鹏伟李兴冀罗志勇杨剑群吕贺万鹏飞
Owner HARBIN INST OF TECH
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