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Method for preparing graphene arrays with different matrix dot thicknesses by aid of composite metal templates

A graphene array, composite metal technology, applied in the direction of graphene, single-layer graphene, non-metallic elements, etc., can solve problems such as airtightness and inability to meet

Active Publication Date: 2019-04-05
SHANDONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the graphene array prepared by this method has a uniform thickness of each lattice point, which cannot meet the needs of applications such as new acceleration sensors, pressure sensors, and vector sensors: acceleration sensors and pressure sensors are widely used in the military, and their sensing films need to be adjusted. Gas-permeable, light-transmitting, thin-middle graphene film with thick edges, while vector sensors require graphene films with thick middle edges and thin edges, not graphene film materials with uniform thickness

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  • Method for preparing graphene arrays with different matrix dot thicknesses by aid of composite metal templates
  • Method for preparing graphene arrays with different matrix dot thicknesses by aid of composite metal templates
  • Method for preparing graphene arrays with different matrix dot thicknesses by aid of composite metal templates

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Embodiment Construction

[0014] The present invention is achieved through the following technical solutions:

[0015] A method for preparing graphene arrays with different lattice point thicknesses using a composite metal template, comprising the steps of:

[0016] (1) providing a metal foil, cleaning it, removing surface impurities, and obtaining a metal foil after removing impurities;

[0017] (2) electroplating or depositing other metal arrays on the metal foil after removal of impurities to obtain a metal array substrate;

[0018] (3) Place the metal array substrate on the quartz boat sample stage of the CVD growth furnace, pump a vacuum, raise the temperature to 200-300°C, inject high-purity argon, control the pressure at 100-300mbar, and keep it warm for 1-5min; then Raise the temperature to 550-650°C, feed high-purity hydrogen, control the pressure at 100-300mbar, keep it warm for 10-60min, and obtain a composite metal array substrate after annealing;

[0019] (4) Continue to heat up the obta...

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Abstract

The invention relates to a method for preparing graphene arrays with different matrix dot thicknesses by the aid of composite metal templates. The method includes plating metal nickel arrays on copperfoils (or plating metal copper arrays on nickel foils) by mask templates; heating the metal nickel arrays at the high temperatures to turn the surfaces of the metal nickel arrays into copper-nickel alloy arrays; feeding carbon sources at the growth temperatures of CVD (chemical vapor deposition) processes; growing the graphene arrays on the surfaces of composite metal thin films during cooling. The method has the advantages that the numbers of layers of graphene in different regions can be controlled by the aid of the composite metal thin films, accordingly, the high-quality graphene arrays with the thick middles and the thin edges or the high-quality graphene arrays with the thin middles and the thick edges can be prepared by the aid of the method, each matrix dot of the graphene arraysprepared by the aid of the existing method has the uniform thickness, the special requirements of application of acceleration sensors, pressure sensors and the like on the graphene can be met, and thehigh-quality graphene arrays can be obtained by the aid of the method.

Description

technical field [0001] The invention relates to a method for preparing graphene arrays with different matrix point thicknesses by using a composite metal template, and belongs to the technical field of graphene array preparation. Background technique [0002] Graphene is a new carbonaceous material in which carbon atoms are closely packed into a two-dimensional honeycomb lattice structure. It has excellent electrical, optical, thermal and mechanical properties, and is expected to be used in high-performance nanoelectronic devices, composite materials, and field emission materials. , Photodetectors, gas sensors and energy storage and other fields have been widely used, and have broad application prospects in industry, power industry and electronics industry. [0003] At present, there are two main methods commonly used to prepare graphene single crystals, one is chemical vapor deposition (CVD) method, and the other is high-temperature SiC pyrolysis method. The chemical vapor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186C01B32/194
CPCC01B32/186C01B32/194C01B2204/32C01B2204/04C01B2204/02
Inventor 杨志远赵莉莉赵显张飒飒李志强程秀凤于法鹏
Owner SHANDONG UNIV