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Probe assembly and its capacitive probe

A capacitive and probe technology, which is applied in the direction of measuring electricity, measuring electrical variables, and components of electrical measuring instruments, can solve problems such as the inability to effectively control the overall power supply network, and achieve the effect of optimizing the target impedance value and improving performance

Active Publication Date: 2021-01-15
CHUNGHWA PRECISION TEST TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, although this optimization method can make the impedance value of the transfer substrate reach the standard, it still cannot effectively control the overall power supply network due to the fact that the transfer substrate is far away from the terminal under test.

Method used

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  • Probe assembly and its capacitive probe
  • Probe assembly and its capacitive probe
  • Probe assembly and its capacitive probe

Examples

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Effect test

no. 1 example

[0034] First, see Figure 1 to Figure 4 , Figure 11 and Figure 12 as shown, figure 1 and figure 2 are respectively the three-dimensional schematic diagrams of the capacitive probe M of the first embodiment of the present invention, image 3 and Figure 4 Respectively, the side view cross-sectional schematic diagram of the capacitive probe M of the first embodiment, Figure 11 and Figure 12 They are schematic diagrams of the probe assembly U according to the embodiment of the present invention. The present invention provides a probe assembly U and its capacitive probe M. The following first and second embodiments will first introduce the main technical features of the capacitive probe M of the present invention, and then the third embodiment will introduce the probe Needle assembly U. In addition, it is worth noting that although the capacitive probe M in the drawings is described as a rectangular columnar body, the present invention is not limited thereto. In other...

no. 2 example

[0042] First, see Figure 6 to Figure 9 as shown, Figure 6 and Figure 7 are respectively the three-dimensional schematic diagrams of the capacitive probe M of the first embodiment of the present invention, Figure 8 and Figure 9 They are respectively the side view cross-sectional schematic diagrams of the capacitive probe M of the second embodiment. Depend on Figure 9 and Figure 4 The comparison shows that the biggest difference between the second embodiment and the first embodiment is that the probe structure 1, the conductive structure 2 and the dielectric structure 3 in the capacitive probe M provided by the second embodiment are connected in parallel. architecture. In addition, it should be noted that the characteristics of the probe structure 1 , the conductive structure 2 and the dielectric structure 3 provided in the second embodiment are similar to those of the foregoing embodiments, and will not be repeated here. In other words, the resistivity, material a...

no. 3 example

[0046] First, see Figure 11 and Figure 12 as shown, Figure 11 and Figure 12 They are schematic diagrams of the probe assembly U according to the embodiment of the present invention. The third embodiment of the present invention provides a probe assembly U, which includes a transfer carrier T, a probe holder B and a plurality of capacitive probes M. As shown in FIG. The transfer carrier T can have multiple accommodating slots TS, the probe carrier B can be arranged on the transfer carrier T, and a plurality of capacitive probes M can be respectively arranged on the probe carrier B, and more The capacitive probes M can be respectively disposed in a plurality of accommodating slots TS of the transfer carrier T. In addition, it should be noted that the combination of the transfer carrier T and the probe holder B is well known to those skilled in the art, and will not be repeated here.

[0047] In view of the above, please refer to Figure 11 and Figure 12 shown, and se...

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Abstract

The invention discloses a probe component and a capacitive type probe thereof. The capacitive type probe comprises a probe structure, a conductive structure and a dielectric structure, the probe structure comprises a first end portion, a second end portion corresponding to the first end portion, and a connecting portion connected between the first end portion and the second end portion, the conductive structure is arranged at one side of the probe structure, and the dielectric structure is arranged between the probe structure and the conductive structure. Therefore, according to the probe component and the capacitive type probe thereof, the impedance value can be optimized.

Description

technical field [0001] The invention relates to a probe assembly and a capacitive probe thereof, in particular to a probe assembly and a capacitive probe applied to a wafer probe card. Background technique [0002] First of all, in the prior art, when a System on Chip (SoC) is tested for high-speed signals, it often faces the problem that the target impedance value of the core power supply at the operating frequency point is too high, and the reason for the high impedance value is the probe Card (Probe Card), transfer substrate (substrate), probe base and wafer probe and other factors. Therefore, most of the current solutions focus on the optimization of the transfer substrate, that is, to improve the target impedance value of the power delivery network (PDN) through an appropriate amount of decoupling capacitors. However, although this optimization method can make the impedance value of the transfer substrate reach the standard, it still cannot effectively control the over...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R1/067G01R1/073
CPCG01R1/06733G01R1/073
Inventor 谢智鹏苏伟志
Owner CHUNGHWA PRECISION TEST TECH
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