Flexible double-layer threshold value gating tube device and preparation method thereof

Abstract

The invention discloses a flexible double-layer threshold value gating tube device and a preparation method thereof. The gating tube device sequentially comprises a flexible substrate, a bottom electrode, a graphene oxide thin film layer, a binary transition metal oxide dielectric layer and a top electrode from bottom to top; the bottom electrode is ITO; the binary transition metal oxide materialis a hafnium oxide thin film; and the top electrode is a platinum electrode. According to the device and the method in the invention, each layer of thin film is prepared by sputtering through a spin-coating method and a magnetron sputtering technology, respectively. The device and the method in the invention have the following advantages that a graphene oxide thin film layer is arranged between atraditional transition metal oxide dielectric layer and the bottom electrode, thereby realizing a two-way threshold value gating behavior, the device can keep good read-write performance under different bending curvature conditions, and no obvious degradation exits before and after bending. In addition, the preparation process is simple and is compatible with a CMOS process; the leakage problem inthe cross array structure of a resistive random access memory can be effectively solved by the prepared flexible gating tube device, and a relatively large development potential is achieved.

Description

technical field [0001] The invention relates to the technical field of microelectronics and resistive memory, and more specifically, the invention relates to a flexible double-layer threshold gating tube device and a preparation method thereof. Background technique [0002] With the rapid development of portable and wearable devices and the wide application of flexible electronic devices such as solar cells, thin film transistors, sensors, organic light-emitting diodes, and radio frequency identification antennas, it is urgent to develop a storage device based on a flexible substrate to realize data storage. Processing, storage functions, radio frequency communication and other functions. At present, with the development of modern microelectronics technology and the miniaturization limit of floating gate flash memory, a new generation of storage devices such as ferroelectric memory, magnetic memory, phase change memory and resistive change memory have attracted widespread at...

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Problems solved by technology

[0003] The structure of the gating tube consists of two layers of conductive electrode material and a layer of semiconductor or insulating storage medium material. The insulating material mainly includes HfO 2 、TiO 2 , ZrO 2 , ZnO and other binary transition metal oxides, but due to the high deposition temperature of traditional resistive materials, it greatly limits the development of flexible storage devices.

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