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Active switch, manufacturing method thereof and display device

A switching and active technology, applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc.

Inactive Publication Date: 2019-04-16
HKC CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide an active switch and its manufacturing method and display device for the problem of how to reduce the manufacturing cost of the TFT structure while preventing the etching damage of the back channel

Method used

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  • Active switch, manufacturing method thereof and display device
  • Active switch, manufacturing method thereof and display device
  • Active switch, manufacturing method thereof and display device

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Embodiment Construction

[0039] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Preferred embodiments of the application are shown in the accompanying drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the application more thorough and comprehensive.

[0040] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and similar expressions are used herein for purposes of ill...

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Abstract

The invention relates to an active switch, a manufacturing method thereof and a display device. The active switch includes a substrate, a grid electrode formed on the substrate, a gate electrode insulating layer which is formed on the substrate and covers the gate electrode, an oxide semiconductor layer formed on the grid electrode insulating layer corresponding to the grid electrode, a black matrix which is formed on the gate electrode insulating layer and covers the oxide semiconductor layer, and a source electrode and a drain electrode formed on the black matrix, wherein the source electrode and the drain electrode are respectively and electrically connected with the oxide semiconductor layer through via holes penetrating through the black matrix. The original etching barrier layer is replaced by the black matrix, back channel corrosion can be effectively prevented, and meanwhile, due to the fact that the source electrode and the drain electrode are shielded in the areas with the holes of the black matrix respectively, the phenomenon of light leakage does not exist; furthermore, due to the fact that an etching barrier layer is omitted, a photomask for etching the barrier layer at a time can be correspondingly reduced, and the manufacturing cost of the whole active switch is reduced.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an active switch, a manufacturing method thereof, and a display device. Background technique [0002] IGZO (Indium gallium zinc oxide, indium gallium zinc oxide), which is a new type of semiconductor material, has a higher electron mobility than amorphous silicon. IGZO is often used as a channel material in a new generation of high-performance TFT (Thin Film Transistor, thin film transistor), thereby improving the resolution of the display panel. [0003] In the IGZO TFT structure, in order to prevent the etch damage of the IGZO back channel, an ESL (Etch stopLayer, etch stop layer) structure is usually used to prevent the etch damage of the back channel, but an ESL mask needs to be added; IGZO ESL Generally used in large-size, high-resolution display panel design, the pixel size is very small, in order to prevent CF (Color Filter, color filter) from shifting when com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/417H01L21/34
CPCH01L29/41733H01L29/41758H01L29/66969H01L29/78606H01L29/7869
Inventor 宋振莉
Owner HKC CORP LTD