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mosfet and power conversion circuit

A power conversion circuit and current technology, applied in circuits, output power conversion devices, electrical components, etc., can solve problems such as MOSFET oscillation and surge voltage of rectifier components

Active Publication Date: 2021-10-29
SHINDENGEN ELECTRIC MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the conventional MOSFET900 is used in a power conversion circuit, after the MOSFET is turned on (Turn on), the reverse recovery current flowing into the MOSFET from the rectifier element may cause the MOSFET to oscillate easily, or cause the rectifier element to malfunction. The surge voltage becomes larger

Method used

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Experimental program
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Effect test

Embodiment approach 1

[0049] 1. Configuration and operation of the power conversion circuit 1 according to the first embodiment

[0050] The power conversion circuit 1 according to the first embodiment is a chopper circuit as a component such as a DC-DC converter or an inverter. The power conversion circuit 1 related to the first embodiment is as figure 1 As shown, it includes: a reactor 10 ; a power supply 20 ; a MOSFET 100 ; and a rectifying element 30 . MOSFET 100 is MOSFET 100 according to the first embodiment.

[0051] The reactor 10 is a passive element capable of storing energy in a magnetic field formed by passing an electric current.

[0052] The power source 20 is a DC power source that supplies current to the reactor 10 .

[0053] MOSFET 100 controls the current supplied to reactor 10 by power supply 20 . Specifically, the MOSFET 100 switches and switches in response to a signal (such as a clock signal) applied to the gate electrode of the MOSFET 100 by a driving circuit (not shown)...

Embodiment approach 2

[0121] MOSFET 102 according to Embodiment 2 basically has the same configuration as MOSFET 100 according to Embodiment 1, but differs from MOSFET 100 according to Embodiment 1 in that it is a trench gate MOSFET rather than a planar gate MOSFET. That is, the MOSFET 102 involved in the second embodiment is as Figure 12 As shown, the semiconductor substrate 110 has: a p-type base region 118 formed on the surfaces of the n-type columnar region 114 and the p-type columnar region 116; and an n-type source region 120 formed on the surface of the base region 118 , the MOSFET 102 involved in Embodiment 2 is a trench gate MOSFET, which further includes: in the area where the n-type columnar region 114 is located, it is formed to a position deeper than the deepest part of the base region 118 when viewed from a plane and is formed such that a part of the source region 120 is exposed on the inner peripheral surface of the trench 138; and is buried inside the trench 138 via the gate insula...

Embodiment approach 3

[0128] The power conversion circuit 4 according to the third embodiment basically has the same configuration as the power conversion circuit 1 according to the first embodiment, but is different from the power conversion circuit 1 according to the first embodiment in that it is a full bridge circuit. That is, the power conversion circuit 4 related to the third embodiment is as Figure 13 As shown, four MOSFETs 100 are provided as MOSFETs, and built-in diodes of each MOSFET are provided as rectifying elements.

[0129] In this way, although the power conversion circuit 4 according to the third embodiment is different from the power conversion circuit 1 according to the first embodiment in that it is a full bridge circuit, like the power conversion circuit 1 according to the first embodiment, since the MOSFET Finally, the operation is as follows: in the center of the n-type columnar region 114, a low-electric-field region 136 with an electric field intensity lower than that of t...

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Abstract

The MOSFET 100 of the present invention is used in a power conversion circuit equipped with: a reactor; a power supply; a MOSFET 100; and a rectifying element, and is characterized in that it includes: a semiconductor substrate 110 having an n-type columnar region 114 and a p-type columnar region 116 , and the super junction structure is formed by the n-type columnar region 114 and the p-type columnar region 116, wherein the n-type columnar region 114 and the p-type columnar region 116 are formed as: the dopant of the p-type columnar region 116 The total amount is higher than the total amount of dopants in the n-type columnar region 114. After turning on the MOSFET, it operates as follows: in the center of the n-type columnar region 114, the electric field intensity is higher than that of the n-type columnar region 114. The regions other than the central region are lower in the low electric field region. According to the MOSFET of the present invention, after the MOSFET is turned on, it is more difficult for the MOSFET to oscillate, and the surge of the rectifying element can also be reduced.

Description

technical field [0001] The present invention relates to MOSFETs and power conversion circuits. Background technique [0002] Conventionally, a MOSFET having a semiconductor base having a superjunction structure composed of n-type column regions and p-type column regions has been widely known (for example, refer to Patent Document 1). [0003] In addition, in this specification, a super junction structure refers to a structure in which n-type columnar regions and p-type columnar regions are alternately and repeatedly arranged when viewed from a predetermined cross-section. [0004] Conventional MOSFET900 such as Figure 14 As shown, it includes: a semiconductor substrate 910, an n-type columnar region 914 and a p-type columnar region 916, and a p-type base region formed on a part of the n-type columnar region 914 and the entire surface of the p-type columnar region 916 918, and the n-type source region 920 formed on the surface of the p-type base region 918, and the super ju...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/7802H01L29/7813H01L29/0634H01L29/0878H01L29/7805H02M3/156H01L29/06H01L29/78H01L29/68H02M1/322H02M1/32
Inventor 新井大辅久田茂北田瑞枝浅田毅
Owner SHINDENGEN ELECTRIC MFG CO LTD
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