A kind of anti-perovskite manganese nitrogen compound/aluminum double connected structure composite material and preparation method thereof

Abstract

The invention discloses an anti-perovskite manganese nitrogen compound / aluminum double-communication structure composite material and a manufacturing method of the anti-perovskite manganese nitrogen compound / aluminum double-communication structure composite material, and relates to the anti-perovskite manganese nitrogen compound / aluminum composite material and the manufacturing method of the anti-perovskite manganese nitrogen compound / aluminum composite material. The anti-perovskite manganese nitrogen compound / aluminum double-communication structure composite material is formed by a reinforcement body and base metal in a composite mode. The reinforcement body is Mn3Zn1-xAxN, and the base metal is pure aluminum or aluminum alloy. The manufacturing method comprises the steps that the reinforcement body and polyvinyl alcohol are added to an ethanol solution, a mixed solution is obtained, and drying is conducted, so that a solid product is obtained; the solid product is pressed and sintered, so that sintered pieces are obtained; the sintered pieces are put into a graphite mold in a filling mode; and the graphite mold is put into an iron mold, and pressurizing infiltration is conductedafter preheating is accomplished. According to the manufacturing method, Mn3Zn1-xAxN particles are processed to form a preformed body, then a pressure infiltration method is adopted to manufacture thecomposite material, and the manufactured composite material is low in thermal expansion coefficient and high in heat conductivity coefficient, density, bending strength and hardness. The manufacturing method is suitable for manufacturing the anti-perovskite manganese nitrogen compound / aluminum composite material.

Description

technical field [0001] The invention relates to an antiperovskite manganese nitrogen compound / aluminum double connected structure composite material and a preparation method thereof. Background technique [0002] The use of electronic products is getting closer and closer to people's lives. From tablets and mobile phones to automotive equipment and aircraft control units, electronic devices are used in most products today, and the environments in which electronic devices are used are increasingly diverse. Therefore, it is very important to package and protect electronic devices. At present, with the development of electronic components towards smaller, lighter and faster trends, their integration level has also increased sharply, which is accompanied by a substantial increase in the heat generation of chips, which in turn leads to a decrease in their lifespan. Since the heat generated by the chip cannot be conducted out in time in ultra-high integrated circuits, the mismat...

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Problems solved by technology

[0004] The present invention aims at the problem of low density of the prepared composite material caused by the solid phase sintering method in the preparation process of the anti-perovskite manganese nitrogen compound / aluminum double-connected structure composite material, and the high temperature required for preparing the composite material with copper as the matrix To solve the problem, a kind of anti-perovskite manganese nitrogen compound / aluminum biconnected structure composite material and its preparation method are proposed

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