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A local active memristor simulator

A memory sensor and emulator technology, applied in the field of circuit design, can solve the problems of mathematical modeling and fewer emulators

Pending Publication Date: 2019-04-19
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, although a few mathematical models of active memory devices have been reported, there are still relatively few mathematical modeling and simulators for local active memory devices, and there are still many theoretical needs for the chaos research of oscillators based on such memory devices. Research

Method used

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  • A local active memristor simulator
  • A local active memristor simulator
  • A local active memristor simulator

Examples

Experimental program
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Embodiment Construction

[0017] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0018] The theoretical starting point of the present invention is the general expression of the magnetic flux current characteristic of local active memristor:

[0019]

[0020] Among them, to ensure its local active characteristics, it is necessary to ensure that the reciprocal of the memristor value (for the magnetically controlled local active memristor) has a negative value when the input voltage changes, that is, The (current-flux) hysteresis curve exhibits a negative slope region. Here, the parameters are set as m=-1, n=-1.

[0021] Such as figure 1 As shown, this example includes an integrated operational amplifier U1 and multipliers U2 and U3, and the voltage u passes through the integrated operational amplifier U1 and multipliers U2 and U3 to finally obtain the magnetic flux and current of the local active memristor; the in...

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Abstract

The invention discloses a local active memristor simulator. The circuit comprises an integrated operational amplifier U1 and a multiplier U2, the voltage u passes through an integrated operational amplifier U1 to form a magnetic flux generation circuit, the integrated operational amplifier U1 is used for realizing integral operation and inverse proportion operation, an output signal passes throughthe U1, the U2 and the U3 to finally obtain current magnitude, and the integrated operational amplifier U1 is used for realizing summation operation; The integrated operational amplifier U1 is connected with the multipliers U2 and U3, and the multipliers are used for multiplying signals and returning the multiplied signals to the operational amplifier U1. The invention provides a local active memristor simulator which is used for simulating the magnetic flux current characteristic of a memristor and replacing an actual memristor to carry out experiment, application and research.

Description

technical field [0001] The invention belongs to the technical field of circuit design, and relates to the realization of a local active memristor emulator, in particular to an equivalent circuit that realizes the relationship between the magnetic flux and the current of the local active memristor. Background technique [0002] Memristors, memcapacitors, and memristors, as a class of basic circuit components with memory properties, have attracted widespread attention for their applications in nonlinear circuits. Because of their unique memory properties, they can be used in non-lost memory and artificial neural networks. Research on local active memory devices, on the one hand, because most of the previous research on passive memory devices requires negative resistance or active devices to provide energy for them in circuit design, and local active devices do not need other devices for energy supply, which solves the problem of The previous limitation issue; on the other han...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/30G06F30/367
Inventor 董玉姣王光义
Owner HANGZHOU DIANZI UNIV
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