Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-precision temperature compensating circuit and method of silicon piezoresistive pressure sensor

A technology of temperature compensation circuit and pressure sensor, which is applied in the direction of measuring fluid pressure by changing ohmic resistance, measuring fluid pressure, measuring fluid pressure through electromagnetic components, etc., which can solve the problem of low precision

Active Publication Date: 2019-04-23
XIAMEN NIELL ELECTRONICS
View PDF23 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantage is that the accuracy can only be compensated to about 1.2%, and the accuracy is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-precision temperature compensating circuit and method of silicon piezoresistive pressure sensor
  • High-precision temperature compensating circuit and method of silicon piezoresistive pressure sensor
  • High-precision temperature compensating circuit and method of silicon piezoresistive pressure sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] Such as Figure 1 to Figure 7 As shown, a high-precision temperature compensation circuit for a silicon piezoresistive pressure sensor of the present invention includes a temperature-controlled constant-voltage source, a zero-point temperature drift compensation circuit, a gain adjustment circuit, a zero-point voltage adjustment circuit, and a subtractor. The zero-point temperature The drift compensation circuit is respectively connected with a temperature-controlled constant voltage source and a gain adjustment circuit, and the subtractor is respectively connected with the gain adjustment circuit and the zero point voltage adjustment circuit.

[0040] Specifically, the temperature-controlled constant voltage source includes an operational amplifier U4A, an interface P2, a PTC thermistor RT1, a resistor R2, a resistor R3, a resistor R6, a resistor R9, and a resistor R a 1. Resistance R b 1. Resistance R c 1. Resistance R d 1. Resistance R S 1. Resistance R S 2. Resistance R...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a high-precision temperature compensating circuit of a silicon piezoresistive pressure sensor. The high-precision temperature compensating circuit comprises a temperature control constant voltage source, a zero point temperature excursion compensating circuit, a gain adjusting circuit, a zero point voltage adjusting circuit and a subtracter. The zero point temperature excursion compensating circuit is connected with the temperature control constant voltage source and the gain adjusting circuit respectively, and the subtracter is connected with the gain adjusting circuitand the zero point voltage adjusting circuit. The invention further provides a high-precision temperature compensating method of the silicon piezoresistive pressure sensor. The temperature compensating method adopting full analog circuits meets the requirements that FS precision of the silicon piezoresistive pressure sensor reaches 0.4%, and 0.5 V - 4.5 V is output in the full temperature range of-55 DEG C to 125 DEG C.

Description

Technical field [0001] The invention relates to the technical field of circuit design, in particular to a high-precision temperature compensation circuit and method for a silicon piezoresistive pressure sensor. Background technique [0002] Existing temperature compensation methods for silicon piezoresistive pressure sensors are generally divided into digital compensation methods and analog compensation methods. [0003] Digital compensation method: use a dedicated pressure sensor conditioning chip to compensate for temperature and pressure, built-in MCU and FLASH memory chip, the disadvantage is that the temperature adaptation range of the FLASH memory chip is relatively narrow, and the storage life has time requirements. [0004] Analog compensation method: Most of the existing analog methods use two-step compensation, first zero point compensation, the bridge output to the zero point by connecting a low temperature drift resistor in series and parallel on the bridge, and then usin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01L9/06G01L19/04
CPCG01L9/065G01L19/04
Inventor 周富强陈昌鹏刘瑞林翁新全许静玲
Owner XIAMEN NIELL ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products