Manufacturing device of multilayer stacked structure and manufacturing method of thin film capacitor

A technology of film capacitors and manufacturing methods, applied in the direction of film/thick film capacitors, capacitor manufacturing, laminated capacitors, etc., can solve the problems of low dielectric constant and complex overall structure, and achieve the effect of improving the dielectric constant

Inactive Publication Date: 2019-04-23
APAQ TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The overall structure of the film capacitor produced by the prior art is too complicated and needs to be improved, and the dielectric constant provided by the film capacitor produced by the prior art is too low and needs to be improved

Method used

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  • Manufacturing device of multilayer stacked structure and manufacturing method of thin film capacitor
  • Manufacturing device of multilayer stacked structure and manufacturing method of thin film capacitor
  • Manufacturing device of multilayer stacked structure and manufacturing method of thin film capacitor

Examples

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no. 1 example

[0034] see Figure 1 to Figure 8 As shown, the first embodiment of the present invention provides a multi-layer stacked structure manufacturing equipment, which includes: a rotatable carrier R, a first material layer forming device D1 and a second material layer forming device D2.

[0035] Furthermore, the rotatable carrier R can be used to carry a carrier substrate 10, the first material layer forming device D1 is disposed adjacent to the rotatable carrier R, and the second material layer forming device D2 is adjacent to the rotatable carrier R. set up. In addition, a plurality of first material layers L1 can be formed by the first material layer forming device D1, a plurality of second material layers L2 can be formed by the second material layer forming device D2, and the first material layer forming device D1 and the second material layer One of the layer forming devices D2 is a co-evaporation device V. In addition, the co-evaporation device V can simultaneously provide ...

no. 2 example

[0049] see Figure 11 to Figure 16 As shown, the second embodiment of the present invention provides a manufacturing equipment of a multi-layer stacked structure and a manufacturing method of a film capacitor. Depend on Figures 11-16 and Figure 2-7 It can be seen that the biggest difference between the second embodiment of the present invention and the first embodiment is:

[0050] First, in the second embodiment, the first material layer L1 can be an insulating material layer 12 mixed with a plurality of conductive particles 120 inside, and the second material layer L2 can be a metal material layer 11 . In addition, the first material layer forming device D1 can be a co-evaporation device V, and the second material layer forming device D2 can be a metal material layer forming device F for forming the metal material layer 11 . In addition, the insulating material layer 12 can be formed by the insulating material M2 provided by the co-evaporation device V, and the conducti...

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PUM

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Abstract

The invention discloses a manufacturing device of a multilayer stacked structure and a manufacturing method of a thin film capacitor. The method includes the steps of: providing a carrier substrate; forming a plurality of first material layers and a plurality of second material layers, wherein the plurality of first material layers and the plurality of second material layers are alternately stacked on the carrier substrate to form a multilayer stacked structure; and forming two end electrode structures to respectively coat the end portions of the reverse sides of two phases of the multilayer stacked structure. A plurality of randomly distributed conductive particles is mixed at the internal portion of one of the first material layers and the second material layers. The conductive particlesare heated at a temperature without higher than the macromolecule pyrolysis temperature to form a spherical structure or a near-spheroidal structure having a low melting point and high surface energy. Therefore, the dielectric constants of the multilayer stacked structure and the film capacitor can be improved.

Description

technical field [0001] The invention relates to a manufacturing device of a multi-layer stack structure and a manufacturing method of a film capacitor, in particular to a manufacturing device of a multi-layer stack structure and a manufacturing method of a film capacitor for increasing the dielectric constant. Background technique [0002] Capacitors have been widely used in basic components of consumer appliances, computer motherboards and their peripherals, power supplies, communication products, and automobiles. Their main functions include: filtering, bypassing, rectifying, coupling, decoupling, Turn equal. It is one of the indispensable components in electronic products. Capacitors have different types according to different materials and uses. Including aluminum electrolytic capacitors, tantalum electrolytic capacitors, multilayer ceramic capacitors, film capacitors, etc. The overall structure of the film capacitor produced in the prior art is too complicated and ne...

Claims

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Application Information

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IPC IPC(8): H01G13/00H01G4/33
CPCH01G4/33H01G13/00
Inventor 钱明谷郑敦仁
Owner APAQ TECH
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