A kind of igbt device packaging structure
A device packaging and device technology, which is applied in the field of IGBT device packaging structure, can solve the problems of extremely inconsistent current, difficulty in increasing IGBT current, and reducing the safe working area of devices, so as to improve operation stability and ensure symmetrical layout.
Active Publication Date: 2020-06-12
董志良
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Problems solved by technology
However, with the increase of the current capacity of IGBT devices, the uniformity of the current becomes the core issue for its safe operation when ultra-large-scale chips are connected in parallel. The extreme inconsistency of the current will greatly reduce the safe working area of the device. At present, the maximum current of high-power IGBTs can only reach 3000A , while the power system’s demand for IGBTs has reached more than 6000A, and it is very difficult to increase the current of a single IGBT. Therefore, more advanced IGBT device parallel technology is needed to achieve IGBT currents up to 6000A.
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[0018] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0019] It should be understood that when used in this specification and the appended claims, the terms "comprising" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude one or Presence or addition of multiple other features, integers, steps, operations, elements, components and / or collections thereof.
[0020] It should also be understood that the terminology used ...
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The invention discloses an IGBT part packaging structure. The IGBT part packaging structure includes a packaging shell and external electrodes, wherein the external electrodes are arranged at the twoends of the packaging shell; a containing cavity is formed in the center of the packaging shell, and grid terminals of IGBT parts stretch into the containing cavity to be electrically connected with adrive plate. By symmetrically containing the IGBT parts in parallel inside the packaging shell, the external electrodes are arranged at the two ends of the packaging shell and are electrically connected with collection electrodes and emitting electrodes of the IGBT parts respectively, the containing cavity is reserved in the center of the packaging shell, and the drive plate electrically connected with the IGBT parts is arranged inside the containing cavity; therefore, symmetrical layout of the parts and symmetry of drive loops of all chips are ensured, current balance when the chips are arranged in parallel is promoted, and operation stability when currents of the parts are amplified is improved.
Description
technical field [0001] The invention relates to the field of packaging technology, in particular to an IGBT device packaging structure. Background technique [0002] The semiconductor power switching device that appeared in the mid-1980s - the insulated gate bipolar power tube IGBT (Insulated Gate Bipolar Transistor) is a composite device, and its input control part is a metal-oxide semiconductor field effect transistor (MOSFET, Metal -Oxide-Semiconductor Field-EffectTransistor), the output stage is a bipolar junction transistor, which has the advantages of both MOSFET and power transistor: high input impedance, voltage control, low driving power, fast switching speed, low saturation voltage, voltage and current capacity Larger, wider safe working area. [0003] The IGBT device is composed of two parts, the chip and the package. The device package realizes the safe and reliable connection between the chip and the external parts, and prevents the chip from being polluted. Us...
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IPC IPC(8): H01L23/02H01L23/10H01L29/739
CPCH01L23/02H01L23/10H01L29/7393
Inventor 董志良
Owner 董志良