Unlock instant, AI-driven research and patent intelligence for your innovation.

Visible light to near infrared integrated spectral detector device and preparation method

A spectral detector, near-infrared technology, applied in sustainable manufacturing/processing, semiconductor devices, climate sustainability, etc., can solve the problems of weak resolution, low integration, high cost, simple preparation process, shortened process The effect of cycle time and cost reduction

Inactive Publication Date: 2019-04-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Based on the above technical problems, the present invention provides a method for preparing a spectral detector integrated from visible light to near-infrared, thereby solving the problem of complex structure, slow imaging speed, high cost, low integration and weak resolution of previous multi-color imaging systems. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Visible light to near infrared integrated spectral detector device and preparation method
  • Visible light to near infrared integrated spectral detector device and preparation method
  • Visible light to near infrared integrated spectral detector device and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0040] An embodiment of the present invention provides a visible-to-near-infrared integrated spectrum detector device, which includes:

[0041] an epitaxial wafer, including an upper N-contact layer;

[0042] A colloidal quantum dot filter layer composed of a colloidal quantum dot array is located on the N contact layer.

[0043] In the device, the epitaxial wafer is an InGaAs infrared detector epitaxial wafer with a p-i-n structure and an InP base.

[0044] In the device, the thickness of the N contact layer is below 100nm.

[0045] In this device, the quantum dot filter layer is realized by a colloidal quantum dot array, which contains multiple regions, and each region is used as a quantum dot filter, and the quantum ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a visible light to near infrared integrated spectral detector device and a preparation method. The device comprises an epitaxial wafer on the upper portion and a colloidal quantum dot filter layer formed by colloidal quantum dot arrays, wherein the colloidal quantum dot filter layer is located on an N contact layer. According to the preparation method, colloidal quantum dots are prepared in the manner that after quantum dot nano-particles capable of absorbing cadmium sulfide, cadmium selenide and lead sulfide in visible light to to near infrared wavebands and p-phenylenediamine are mixed, the mixture is dissolved in a high-molecular polymer polyvinyl butyral chloroform solution. The focal plane device has the advantages that multiple pieces of incident light at different wavebands can be synchronously acquired separately, an original spectrum is reconstructed based on the wavelength multiplexing principle, target information of multiple wavebands is acquired simultaneously, interference generated during multi-color target detection is effectively eliminated, and the high-resolution effect of targets is improved.

Description

technical field [0001] The invention relates to the technical field of infrared detection and imaging, more specifically, the invention relates to a preparation method of a single-chip integrated hyperspectral detector from visible light to near infrared. Background technique [0002] Infrared detectors are devices that convert incident infrared radiation signals into electrical signals, which can capture infrared light that is imperceptible to the human eye and output it in the form of electrical signals. Materials and devices for infrared detection mainly include pyroelectric detectors based on thermal effects, photodetectors based on photoelectric effects, and new material detectors based on graphene, carbon nanotubes, and quantum dots. At present, the technology of photoelectric detectors is the most mature. After the infrared detectors based on photoelectric technology are miniaturized, they can be fabricated into a dense detector array, that is, the infrared focal plan...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L31/0232H01L31/18
CPCH01L31/0232H01L31/105H01L31/1844Y02P70/50
Inventor 徐云张林奥白霖陈华民张九双宋国峰陈良惠
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI