Unlock instant, AI-driven research and patent intelligence for your innovation.

Mn-W-Cu-O-series sputtering target and preparation method thereof

A mn-w-cu-o, sputtering target technology, applied in sputtering plating, ion implantation plating, coating, etc., can solve the problem of high material cost and achieve the effect of suppressing abnormal discharge

Pending Publication Date: 2019-04-30
DEXERIALS CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As an inorganic oxide material, palladium oxide is put into practical use, but since Pd is a noble metal, the material cost is high, so it is desired to develop a recording layer that can replace palladium oxide and realize it at a low material cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mn-W-Cu-O-series sputtering target and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0050] [Manufacturing method of Mn-W-Cu-O sputtering target]

[0051] Next, a method of preparing the target according to this embodiment will be described. The preparation method according to this embodiment includes a mixing step and a sintering step.

[0052] First, through a mixing step, the mixed powder containing manganese-containing powder, tungsten-containing powder, and copper-containing powder is wet-mixed for 10 hours or more.

[0053] As the manganese-containing powder, it can be appropriately selected according to the purpose, and a powder of a monomer or compound containing Mn, and the like can be mentioned. Among them, manganese oxide is preferred. As the manganese oxide, for example, Mn can be used 3 O 4 , Mn 2 O 3 , MnO, MnO 2 , MnO 3 , Mn 2 O 7 Wait. These can be used individually by 1 type or in combination of 2 or more types. Among the above-mentioned manganese oxides, Mn is preferred according to the relationship between the sintering temperature and the melt...

Embodiment 1

[0073] In Example 1, the following powders were prepared as raw material powders.

[0074] Mn 3 O 4 Powder (purity: 99.9% or more, average particle size: 5μm)

[0075] W powder (purity: 99.9% or more, average particle size: 2μm)

[0076] Cu powder (purity: 99.9% or more, average particle size: 1.5μm)

[0077] The above-mentioned raw material powder was weighed so that the ratio of each containing metal was Mn:W:Cu=30:40:30 (atom %). The weighed raw material powders, zirconia balls (diameter 5 mm) and alcohol (ethanol) 3 times the total weight of each raw material powder were put into a container, and a ball mill was used for 12 hours of wet mixing. After the mixed powder is dried, it is passed through a sieve with an aperture of 500 μm. Next, apply to the above mixed powder at a sintering temperature of 900°C for 2 hours, 200kgf / cm 2 The pressure is hot-pressed in an inert gas atmosphere to prepare a sputtering target. The shape of the sputtering target is a disc, and the size is 5...

Embodiment 2

[0079] In Example 2, a sputtering target was prepared by the same method as Example 1, except that the wet mixing time was set to 24 hours and the sintering temperature was set to 920°C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
light receiving slitaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention aims to provide a Mn-W-Cu-O-series sputtering target which suppresses abnormal discharging and realizes stable film forming and a preparation method thereof. The invention provides the Mn-W-Cu-O-series sputtering target which comprises Mn, W, Cu and O, wherein the relative density is above 90% and resistivity is below 9*10<-4> omega*cm.

Description

Technical field [0001] The present invention particularly relates to an Mn-W-Cu-O-based sputtering target useful for the formation of a recording layer of an optical information recording medium and a method for preparing the same. Background technique [0002] In recent years, in the field of optical information recording media (optical discs), there has been a demand for an increase in the capacity of optical discs along with the increase in processed data. Optical discs are roughly classified into read-only and recording types, and recording types are further subdivided into two types: write-once type and rewritable type. As a write-once recording layer material, organic dye materials have been widely studied in the past, but with the increase in capacity in recent years, inorganic materials have also been widely studied. [0003] As a useful recording method using an inorganic material, there is a recording method that utilizes a situation in which a recording layer containing...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C30/02C22C32/00
CPCC22C27/04C22C30/02C23C14/3414C23C14/3407C22C1/05C22C32/0015C22C32/0031
Inventor 菅原淳一加守雄一
Owner DEXERIALS CORP