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High purity copper sputtering target material

A sputtering target, high-purity technology, used in sputtering plating, metal material coating process, electrical components, etc. Line film and other problems, to achieve the effect of suppressing abnormal discharge and stabilizing film formation

Active Publication Date: 2018-04-17
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0018] Here, in the inventions described in the above-mentioned Patent Documents 1 to 5, the abnormal discharge (arc discharge) cannot be sufficiently suppressed during the film formation process, and the miniaturized and thinned wiring film cannot be efficiently and stably formed.

Method used

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Experimental program
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Effect test

no. 3 Embodiment approach

[0131] Hereinafter, the high-purity copper sputtering target material which concerns on 3rd Embodiment of this invention is demonstrated.

[0132] Since the usage as the high-purity copper sputtering target material of this embodiment is the same as that of 1st Embodiment, it omits.

[0133] Since the composition of the high-purity copper sputtering target material which is this embodiment is the same as the composition of the high-purity copper sputtering target material of 1st Embodiment, the detailed description is abbreviate|omitted.

[0134] And, in the high-purity copper sputtering target material as the present embodiment, by thermal desorption gas analyzer (TDS-MS) at 1 × 10 -7 The sample extracted from the target to a predetermined size is heated in an ultra-high vacuum below Pa, and the gas components released during the period from 50°C to 1000°C are ionized by the electron impact method, and analyzed by a quadrupole mass spectrometer. The generated ions are analyz...

no. 4 Embodiment approach

[0163] Hereinafter, the high-purity copper sputtering target material which concerns on 4th Embodiment of this invention is demonstrated.

[0164] Since the usage as the high-purity copper sputtering target material of this embodiment is the same as that of 1st Embodiment, it omits.

[0165] Since the composition of the high-purity copper sputtering target material which is this embodiment is the same as the composition of the high-purity copper sputtering target material of 1st Embodiment, the detailed description is abbreviate|omitted.

[0166] In addition, in the high-purity copper sputtering target according to the present embodiment, the average value of local orientation differences in crystal orientation between one measurement point and all other measurement points in the same crystal grain obtained by EBSD measurement The value (GOS) is set to 4° or less.

[0167] And in the high-purity copper sputtering target material which is this embodiment, an average crystal gr...

no. 5 Embodiment approach

[0195] Hereinafter, the high-purity copper sputtering target material which concerns on 5th Embodiment of this invention is demonstrated.

[0196] Since the usage as the high-purity copper sputtering target material of this embodiment is the same as that of 1st Embodiment, it omits.

[0197] Since the composition of the high-purity copper sputtering target material which is this embodiment is the same as the composition of the high-purity copper sputtering target material of 1st Embodiment, the detailed description is abbreviate|omitted.

[0198] In addition, in the high-purity copper sputtering target according to the present embodiment, the area ratio of crystals having a plane orientation of ±10° on the sputtering surface of the target obtained by EBSD measurement is set to 0.2 or less.

[0199] And in the high-purity copper sputtering target material which is this embodiment, an average crystal grain diameter is made into 70 micrometers or less, and Vickers hardness is ma...

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Abstract

Provided is a high purity copper sputtering target material characterized in that Cu purity excluding O, H, N and C is at least 99.99998 mass%, Al content is 0.005 mass ppm or less, Si content is 0.05mass ppm or less, Fe content is 0.02 mass ppm or less, S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, O content is 1 mass ppm or less, H content is 1 mass ppm or less, N content is 1 mass ppm or less, and C content is 1 mass ppm or less.

Description

technical field [0001] The present invention relates to a high-purity copper sputtering target used when forming a wiring film (high-purity copper film) in, for example, a semiconductor device, a flat-panel display such as a liquid crystal or an organic light-emitting diode panel, and a touch panel. [0002] This application claims to be based on the patent application No. 2015-164631 filed in Japan on August 24, 2015, the patent application No. 2015-200108 filed in Japan on October 8, 2015, and the patent application filed in Japan on October 8, 2015 Patent application No. 2015-200109, patent application No. 2015-200110 filed in Japan on October 8, 2015, patent application No. 2016-031174 filed in Japan on February 22, 2016, and patent application filed in Japan on February 22, 2016 Priority of Application No. 2016-031334, the contents of which are incorporated herein. Background technique [0003] Conventionally, Al has been widely used as a wiring film for semiconductor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C25C7/02C25C1/12C22C9/01C22C9/10C22F1/08C22B15/14C22C9/06C22C9/08C22F1/00
CPCC25C1/12C25C7/02C22F1/08C22C9/00C23C14/3414H01J37/3426
Inventor 森晓谷雨佐藤雄次菊池文武荒井公
Owner MITSUBISHI MATERIALS CORP
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