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Sintered oxide material, target comprising same, and oxide semiconductor thin film

A technology of oxide semiconductors and oxides, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as insufficient target research, and achieve the effects of suppressing abnormal discharge and stable reproducibility

Inactive Publication Date: 2013-02-06
IDEMITSU KOSAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are insufficient evaluations on target performance and studies on nodules that occur during sputtering

Method used

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  • Sintered oxide material, target comprising same, and oxide semiconductor thin film
  • Sintered oxide material, target comprising same, and oxide semiconductor thin film
  • Sintered oxide material, target comprising same, and oxide semiconductor thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-3

[0121] Weigh the indium oxide powder with an average particle diameter of 0.98 μm and the alumina powder with an average particle diameter of 0.97 μm to obtain the atomic ratio Al / (Al+In) shown in Table 1. After uniformly pulverizing and mixing, add the bonding agent for molding. The agent is granulated. Next, the raw material mixed powder was uniformly filled into a mold, and compression molding was performed at a pressure of 140 MPa with a cold press. The molded body thus obtained was fired in a sintering furnace at the firing temperature and firing time shown in Table 1 to produce a sintered body.

[0122] The firing atmosphere was an oxygen atmosphere during the temperature rise, and was also in the air (atmosphere), and the firing was performed at a temperature rise rate of 1° C. / min and a temperature fall rate of 15° C. / min.

[0123] In addition, the average particle diameter of the raw material oxide powder used was measured with the laser diffraction particle size dis...

Embodiment 4

[0158] On a glass substrate and with a 100nm thick thermal oxide film (SiO 2 ) were respectively used on the silicon substrates obtained in Example 1 (Al / (In+Al)=0.013), and a thin film with a film thickness of 50 nm was formed by DC magnetron sputtering.

[0159] Sputtering is vacuum exhausted until the back pressure reaches 1×10 -4 Pa, while argon 9.9sccm, water 0.1sccm (hydraulic pressure: 4.0×10 -3 Pa) was flowed in, and the pressure was adjusted to 0.4 Pa, and the sputtering power was 100W at room temperature.

[0160] The crystal structure immediately after film formation of the thin film formed on the glass substrate was confirmed by XRD. As a result, no clear diffraction peak was observed, and it was confirmed that it was amorphous. The glass substrate on which the thin film was formed was put into a heating furnace heated to 300° C. in air, and treated for 1 hour. As a result of XRD measurement of the annealed thin film, only the peak of the bixbyite structure of ...

Embodiment 5

[0165] On a glass substrate and with a 100nm thick thermal oxide film (SiO 2 ) on silicon substrates, respectively using the target (Al / (In+Al)=0.027) obtained in Example 2, a thin film with a film thickness of 50 nm was formed by DC magnetron sputtering.

[0166] Sputtering is vacuum exhausted until the back pressure reaches 1×10 -4 Pa, while argon 9.9sccm, water 0.1sccm (hydraulic pressure: 4.0×10 -3 Pa) was flowed in, and the pressure was adjusted to 0.4 Pa, and the sputtering power was 100W at room temperature.

[0167] The crystal structure immediately after film formation of the thin film formed on the glass substrate was confirmed by XRD. As a result, no clear diffraction peak was observed, and it was confirmed that it was amorphous. The glass substrate on which the thin film was formed was put into a heating furnace heated to 300° C. in air, and treated for 1 hour. As a result of XRD measurement of the annealed thin film, only the peak of the bixbyite structure of ...

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Abstract

A sintered oxide material comprising an oxide of indium and an oxide of aluminum, wherein the atomic ratio Al / (Al+In) is 0.01 to 0.08.

Description

technical field [0001] The present invention relates to an oxide sintered body, a target formed therefrom, and an oxide semiconductor thin film. Background technique [0002] Field-effect transistors such as thin-film transistors (TFT) have been widely used as unit electronic components of semiconductor memory integrated circuits, high-frequency signal amplification components, liquid crystal drive components, etc., and are the most practical electronic devices now. Among them, with the remarkable development of display devices in recent years, in various display devices such as liquid crystal display devices (LCD), electroluminescent display devices (EL), field emission displays (FED), etc., as the driving voltage applied to display elements, To drive the switching element of the display device, TFT is often used. [0003] As a material of a semiconductor layer (channel layer) which is a main component of a field effect transistor, a silicon semiconductor compound has been...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/00C23C14/34H01L21/20H01L21/203H01L21/336H01L21/363H01L29/786
CPCC23C14/086C04B2235/5445C23C14/3414H01L21/02631Y10S977/89H01L21/02565C04B2235/3225B82Y30/00C04B2235/3217C04B2235/3286C04B2235/6562C04B2235/6567H01L21/02488C04B35/62675C04B2235/76H01L21/02422H01L21/02658C04B2235/5436C04B2235/77Y10S977/755C04B35/62218C04B2235/963H01L21/02381C04B35/01C04B2235/6585C04B2235/3409C04B2235/6565H01L29/7869C04B35/10C04B35/62222H01L21/02521C04B2111/00801C04B2235/3293H10K71/16
Inventor 江端一晃笘井重和矢野公规井上一吉
Owner IDEMITSU KOSAN CO LTD
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