Material for cylindrical sputtering target

Abstract

A material for a cylindrical sputtering target comprising copper or a copper alloy, wherein, when a special grain boundary length ratio L[sigma]N / LN in the crystalline structure of the outer peripheral surface is defined by a unit total grain boundary length LN per unit area of 1 mm2 and a unit total special grain boundary length L[sigma]N per unit area of 1 mm2 as measured by EBSD, the average value of the special grain boundary length ratio L[sigma]N / LN measured in the outer peripheral surfaces of both ends in the axial (O) direction and in the outer peripheral surface of the middle is 0.5 or greater, the measured values are all within a range of + / -20% of the average value of the special grain boundary length ratio L[sigma]N / LN, the total of the impure element contents for Si and C is 10 ppm by mass or less, and the O content is 50 ppm by mass or less.

Description

technical field [0001] The present invention relates to a raw material for a cylindrical sputtering target used as a raw material for a cylindrical sputtering target in which a thin film made of copper or a copper alloy is formed by sputtering. [0002] This application claims priority based on Patent Application No. 2014-088186 for which it applied in Japan on April 22, 2014, and uses the content here. Background technique [0003] Conventionally, Al or Al alloys have been widely used as wiring films for flat panel displays such as liquid crystal and organic EL panels, touch panels, and the like. Recently, the miniaturization (narrow width) and thinning of wiring films have been achieved, and wiring films with lower specific resistance than conventional ones are required. [0004] Therefore, along with the miniaturization and thinning of the above-mentioned wiring film, there is provided a wiring film using copper or a copper alloy which is a material lower in specific res...

AI Technical Summary

Problems solved by technology

[0010] However, in the case of film formation using a sputtering target, abnormal discharge (arc discharge) may occur due to foreign matter in the sputtering target, so that a uniform wiring film may not be formed

Here, the abnormal discharge refers to a phenomenon in which a very high current suddenly and rapidly flows compared with normal sputtering, resulting in a sudden and abnormally large discharge. If such an abnormal discharge occurs, it may lead to The cause of particle generation, or the film thickness of the wiring film becomes uneven

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