Sound field particle vibration velocity sensitive structure and making method

A sensitive structure and particle velocity technology, which is applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems that limit the wide application of particle velocity measurement sensors, acoustic signal distortion, and high loss rate

Inactive Publication Date: 2019-04-30
THE THIRD RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Application Information

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Problems solved by technology

[0004] The disadvantage of the existing sound field particle velocity sensitive structure is that due to the material properties of the above-mentioned particle velocity measurement sensor sensitive structure and its topological structure have a finite length boundary heat conduction effect, the loss rate of heat from the boundary is higher than that caused by low frequency sound waves. The heat exchange rate caused by the sensor makes the response characteristics of the sensor worse in the low frequency band
In the low-frequency band below 100Hz, the s...

Method used

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  • Sound field particle vibration velocity sensitive structure and making method
  • Sound field particle vibration velocity sensitive structure and making method
  • Sound field particle vibration velocity sensitive structure and making method

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Embodiment 1

[0039] Such as figure 1 As shown, a bridge hole is formed on the silicon substrate 1, and a plurality of thin wires are provided. Corresponding to each thin wire, one electrode is respectively arranged on both sides of the bridge hole; among the plurality of thin wires, one thin wire is heated by electricity Thin wires, the other thin wires are sensitive thin wires, and the electric heating thin wires are located on the outermost side. Among the plurality of thin wires arranged from outside to inside, the distance between the thin wires gradually increases from outside to inside. In this embodiment, there are three thin wires, which are electrified heating thin wire 2, first sensitive thin wire 3, and second sensitive thin wire 4 from outside to inside, corresponding to each thin wire, and the two sides of the bridge hole are corresponding to each other. One electrode, that is, a first electrode 5 , a second electrode 6 , a third electrode 7 , a fourth electrode 8 , a fifth ...

Embodiment 2

[0042] In the second embodiment, the width of the electric heating thin wire 2 is 10 μm, the width of the sensitive thin wire is 2 μm, and the thickness of the thin wire is 0.4 μm. The distance between the first sensitive thin wire 3 and the electric heating thin wire 2 is 20 μm, and the distance between the first sensitive thin wire 3 and the second sensitive thin wire 4 is 80 μm. . All the other structures of embodiment two are the same as embodiment one.

[0043] The preparation method of the sound field particle velocity sensitive structure of the present invention comprises the following steps:

[0044] Step 1: If figure 2As shown, silicon oxide and silicon nitride support layers are sequentially deposited on a silicon substrate;

[0045] Step 2: If image 3 As shown, carry out glue coating, photolithography and development for the first time, and define the group of multiple micro-pitch thin wires, the first electrode, the second electrode, and the first acoustic fi...

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Abstract

The invention relates to a sound field particle vibration velocity sensitive structure and a making method. A bridge hole is formed on a silicon substrate, two sides of the bridge hole are provided with electrodes respectively, and thin wires are arranged between the electrodes at two sides. The sound field particle vibration velocity sensitive structure is characterized in that multiple thin wires are arranged; in correspondence to each thin wire, one electrode is arranged correspondingly at two sides of the bridge hole respectively; the outermost thin wire in the multiple thin wires is an electrically heating thin wire, and the rest are sensitive thin wires; and the sound field particle vibration velocity sensitive structure is a unilateral non-equidistant bridge-type thin wire sensitivestructure. By adopting the unilateral non-equidistant bridge-type thin wire sensitive structure, the finite-length boundary heat conduction effects of a sensitive unit can be effectively suppressed,the response characteristics of the sensor in a low frequency band are improved, and the response sensitivity of the sensitive structure to the low-frequency sound field particle vibration velocity isenhanced.

Description

technical field [0001] The invention relates to a sound field particle vibration velocity sensitive structure and a preparation method. Background technique [0002] In a large number of acoustic measurement applications, because the sound intensity measurement and its spectrum analysis have unique advantages in the study of the characteristics of the noise source, it has become a powerful tool for acoustic research. Usually, the acquisition of sound intensity information requires the measurement of sound pressure and particle velocity in the sound field. [0003] The sensitive structure of the existing particle vibration velocity sensor is to use micro-electromechanical system (MEMS) technology to prepare a sensitive structure composed of several metal platinum resistance wires (thin wires) that are very close to each other on a silicon-based substrate, which can be directly Measure the vibration velocity of medium molecules caused by the propagation of sound field in spac...

Claims

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Application Information

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IPC IPC(8): G01H11/06G01P3/50B81C1/00
CPCB81C1/00023G01H11/06G01P3/50
Inventor 刘云飞周瑜冯杰
Owner THE THIRD RES INST OF CHINA ELECTRONICS TECH GRP CORP
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