Drive substrate and display device

Abstract

The invention provides a driving substrate and a display device. The driving substrate includes a substrate, at least one active element, a resistor, a first protection layer and a second protection layer. The active element with the oxide semiconductor layer and the resistor coupled to the active element are disposed on the substrate. The first protection layer covers the active device, wherein a part of the first protection layer directly contacts the oxide semiconductor layer so that the oxide semiconductor layer has a first conductivity. The second protection layer covers the first protection layer and the resistor, wherein a part of the second protection layer directly contacts the resistor so that the resistor has a second conductivity. The first conductivity is different from the second conductivity.

Description

technical field [0001] The present invention relates to a substrate and an electronic device, in particular to a driving substrate and a display device having the driving substrate. Background technique [0002] In general, amorphous silicon thin film transistors are prone to threshold voltage shift and high leakage current (off current) in high-voltage operating environments, and the molecular structure of amorphous silicon has no order and direction, which will make non-crystalline silicon thin film transistors The movement of electrons in the channel layer of the crystalline silicon thin film transistor is affected, thereby reducing the mobility of carriers. In contrast, the oxide semiconductor thin film transistor has excellent high voltage resistance stability and good carrier mobility. Therefore, the oxide semiconductor thin film transistor has the potential to be a driving element of a display device under a high-voltage operating environment. [0003] However, alth...

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Problems solved by technology

[0003] However, although oxide semiconductor thin film transistors have good high-voltage resistance characteristics, they are not resistant to high current (high heat). As a result, under high-voltage operating environments, oxide semiconductor thin film transistors cannot withstand high current and cause damage, which in turn makes the display Device not working properly

Therefore, at present, the length of the channel layer of the oxide semiconductor thin film transistor is mostly extended to reduce the current load. However, this method is accompanied by an increase in parasitic capacitance, resulting in serious signal delay and high power loss.

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