RF switch device and formation method thereof
A technology of radio frequency switches and devices, which is applied to waveguide devices, electrical components, circuits, etc., can solve problems such as the increase of quality factor FOM, the increase of off capacitance Coff, and the deterioration of the performance of radio frequency switching devices, so as to improve performance, Reduce the effect of Coff
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[0032] The method for forming the radio frequency switching device and the radio frequency switching device proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structures. In particular, each drawing needs to display different emphases, and sometimes uses different scales.
[0033] The method for forming a radio frequency switching device provided in an embodiment of the present invention includes:
[0034] Step S10: providing a substrate;
[0035] Step S11: forming a gate structure on the substrate;
[0036] Step S12: forming an etching stop layer, the etching stop layer covering the g...
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