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RF switch device and formation method thereof

A technology of radio frequency switches and devices, which is applied to waveguide devices, electrical components, circuits, etc., can solve problems such as the increase of quality factor FOM, the increase of off capacitance Coff, and the deterioration of the performance of radio frequency switching devices, so as to improve performance, Reduce the effect of Coff

Active Publication Date: 2019-06-28
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] For RF switching devices, it mainly includes source, drain and gate. Generally, parasitic capacitance will be generated between drain and gate, and at the same time, parasitic capacitance will also be generated between source and gate. Parasitic capacitance The presence of will lead to an increase in the off-capacitance Coff, which will lead to an increase in the quality factor FOM, making the performance of the RF switching device worse

Method used

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  • RF switch device and formation method thereof
  • RF switch device and formation method thereof
  • RF switch device and formation method thereof

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Embodiment Construction

[0032] The method for forming the radio frequency switching device and the radio frequency switching device proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structures. In particular, each drawing needs to display different emphases, and sometimes uses different scales.

[0033] The method for forming a radio frequency switching device provided in an embodiment of the present invention includes:

[0034] Step S10: providing a substrate;

[0035] Step S11: forming a gate structure on the substrate;

[0036] Step S12: forming an etching stop layer, the etching stop layer covering the g...

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Abstract

The invention provides an RF switch device and a formation method thereof. A gate structure is formed on a substrate, and an etching stop layer, a first dielectric layer, a silicon nitride layer and asecond dielectric layer are formed on the gate structure and substrate successively, an air gap is formed in the silicon nitride layer. The dielectric constant of the air gap is minimal, so that viathe air gap, the parasitic capacitance between a source metal layer and the gate structure formed on the second dielectric layer and between the drain metal layer and the gate structure formed on thesecond dielectric layer is minimized, and further, the turnoff capacitor Coff is reduced, and performance of the RF switch device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method for forming a radio frequency switch device and the radio frequency switch device. Background technique [0002] The radio frequency switching device is a device used for signal switching in the communication field. It has the advantages of simple structure, wide application range, low cost, low power consumption, easy installation, and high reliability. It can be widely used in carrier telephone switching, cable television signal Switching, cable TV signal switch and other fields, when it is working, some areas are in the on state, and some areas are in the off state. [0003] The quality factor FOM (Figure Of Merit) is used to evaluate the switching performance or process capability of the field effect transistor MOSFET. It is a compromise between Insertion Loss and Isolation. The insertion loss is characterized by the on-resistan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/15H01P11/00
Inventor 刘张李
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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