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Approximate lattice oriented graphene preparation device and method

A technology for lattice orientation and preparation of devices, applied in the directions of graphene, nano-carbon, etc., can solve the problems of producing graphene, unable to apply graphene in a large area, unable to use vapor deposition method, etc., to avoid waste, maintain uniformity, Effect of Discharge Control

Pending Publication Date: 2019-05-10
王青
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Problems solved by technology

The present invention is mainly used to solve the problem that the prior art cannot produce graphene by vapor deposition method and cannot apply graphene in a large area

Method used

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  • Approximate lattice oriented graphene preparation device and method
  • Approximate lattice oriented graphene preparation device and method
  • Approximate lattice oriented graphene preparation device and method

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Embodiment Construction

[0026] use Figure 1-Figure 5 A preparation device and method for graphene with approximate lattice orientation according to an embodiment of the present invention are described as follows.

[0027] Such as Figure 1-Figure 5 As shown, a preparation device with approximate lattice orientation graphene described in the present invention includes a storage frame 1, a laminating plate 2, a transmission forming mechanism 3, a sealing mechanism 4, a baffle plate 5, a rotating ventilation mechanism 6, and a vacuum pumping mechanism. Mechanism 7; the transmission forming mechanism 3 is provided with four, the transmission forming mechanism 3 is symmetrically arranged up and down, left and right, and the two ends of the transmission forming mechanism 3 are provided with fillers 31, and the inner middle part of the transmission forming mechanism 3 is provided with a baffle plate 5, and the transmission forming mechanism The mechanism 3 includes a roller 32, a conveyor belt 33 and a si...

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Abstract

The invention belongs to the technical field of graphene preparation and particularly relates to an approximate lattice oriented graphene preparation device and method. The device comprises a collection frame, a fitting plate, four transmission forming mechanisms, a seal mechanism, a retaining plate, a rotary ventilation mechanism and a vacuumizing mechanism. The transmission forming mechanisms are in symmetrical arrangement vertically and bilaterally, two ends of each transmission forming mechanism are provided with filler parts, partition plates are arranged in inner middles of the transmission forming mechanisms, and each transmission forming mechanism comprises rollers, a conveying belt and silicon plates. The filler parts are used for enabling an airtight state of a cavity formed in the corresponding transmission forming mechanism. Each transmission forming mechanism is internally partitioned into two cavities by the corresponding partition plate, wherein the cavity on the left side of the partition plate is a heating cavity while the cavity on the right side of the partition plate is a cooling cavity. The conveying belts are in transmission connection with the outer surfacesof the rollers, and the silicon plates are uniformly and densely connected to the outer surfaces of the conveying belts. The approximate lattice oriented graphene preparation device and the method aremainly used for solving the problem of failure in large-area application of graphene due to failure in adoption of a vapor deposition method for graphene production in the prior art.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, in particular to a preparation device and method for graphene with approximate lattice orientation. Background technique [0002] Graphene has excellent optical, electrical, and mechanical properties, and has important application prospects in materials science, micro-nano processing, energy, biomedicine, and drug delivery. It is considered to be a revolutionary material in the future. Physics at the University of Manchester Scientists Andre Geim and Konstantin Novoselov successfully separated graphene from graphite by micromechanical exfoliation, so they jointly won the 2010 Nobel Prize in Physics, common powder of graphene The production methods are mechanical stripping method, redox method, and SiC epitaxial growth method, and the film production method is chemical vapor deposition method, among which the vapor phase deposition method is the best method for forming, because the va...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
Inventor 不公告发明人
Owner 王青
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