A cross blind element detection and correction device and method for an ingaas shortwave infrared imager

Abstract

The present invention claims to protect a cross-blind element detection and correction device and method for an InGaAs short-wave infrared imager, including a short-wave infrared standard radiation source, an InGaAs short-wave infrared imager, an upper computer detection and analysis system, and an upper computer imaging correction system; upper computer detection The analysis system collects the correction image data transmitted to the host computer, and the host computer imaging correction system collects the original image data transmitted to the host computer. The method proposed in the present invention mainly detects and processes blind cross pixels. Compared with the conventional correction processing method, the processing effect on blind cross pixels is better. The image can be corrected without recalculating the correction parameters; in view of the characteristics of the short-wave infrared imager using the reflected light of the scene for imaging, the short-wave infrared standard radiation source uses an integrating sphere, which makes the light output more uniform and less affected by temperature.

Description

technical field [0001] The invention belongs to the field of short-wave infrared image processing, and more specifically relates to a cross blind element detection and correction device and method of an InGaAs short-wave infrared imager. Background technique [0002] In recent years, with the rapid development of InGaAs material growth technology and its focal plane preparation technology, a short-wave infrared focal plane detector based on InGaAs material appeared and matured rapidly, driving the progress of short-wave infrared solid-state imaging technology. InGaAs is a pseudo-binary semiconductor material of the III-V group. It has a zinc blende cubic crystal structure. By adjusting the components of In and Ga, its corresponding wavelength range can reach 0.5μm-2.5μm, and it has a high quantum efficiency and sensitivity. The short-wave infrared focal plane detector based on InGaAs material has the advantages of uncooled room temperature operation, high detection rate, an...

AI Technical Summary

Problems solved by technology

However, these methods are inapplicable when dealing with cross-blind pixels, and the compensation effect is difficult to meet expectations, and sometimes even aggravates the inhomogeneity of the image

Therefore, if the focal plane detector used in the SWIR imager has blind cross pixels, the existing processing methods will not be able to obtain the best image quality

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