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Method for preparing polysilicon passivation contact structure by tubular PECVD

A contact structure and polysilicon technology, applied in the field of solar cells, can solve the problems of reducing cell yield, increasing production costs, and high equipment prices, and achieve the effects of improving yield, saving costs, and reducing equipment prices

Active Publication Date: 2020-11-17
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, the price of related equipment is relatively high, which increases the production cost
[0022] 3) Long process time: the total time for preparing silicon oxide, intrinsic polysilicon, phosphorus diffusion and other steps is more than 280 minutes, which is very long and greatly reduces the battery yield

Method used

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  • Method for preparing polysilicon passivation contact structure by tubular PECVD
  • Method for preparing polysilicon passivation contact structure by tubular PECVD

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Using the n-type silicon wafer, remove the damaged layer on the surface, and plate the same structure on both sides. The specific treatment is as follows:

[0057] 1. After the silicon wafer is cleaned, put it into the graphite boat;

[0058] 2. Deposition of silicon oxide: substrate temperature 400 o C, with laughing gas (N 2 O) is the reaction gas, the flow rate is 3000sccm, the air pressure is 200Pa, the deposition power is 2000W, the radio frequency on-off ratio is 2ms: 10ms, and the deposition time is 120 seconds;

[0059] 3. Deposit a layer of phosphorus-doped amorphous silicon film on the silicon oxide layer: substrate temperature 600 o C, SiH 4 :H 2 :PH 3 =1500sccm: 10000sccm: 1500sccm, the air pressure is 250Pa, the deposition power is 2000W, the radio frequency on-off ratio is 3ms: 45ms, and the deposition time is 600 seconds;

[0060] 4. Deposit II layer phosphorus-doped amorphous silicon film on layer I phosphorus-doped amorphous silicon film: substra...

Embodiment 2

[0064] Using the n-type silicon wafer, remove the damaged layer on the surface, and plate the same structure on both sides. The specific treatment is as follows:

[0065] 1. After the silicon wafer is cleaned, put it into the graphite boat;

[0066] 2. Deposition of silicon oxide: substrate temperature 400 o C, as carbon dioxide (CO 2 ) is the reaction gas, the flow rate is 5000sccm, the air pressure is 220Pa, the deposition power is 2500W, the radio frequency on-off ratio is 2ms:30ms, and the deposition time is 120 seconds;

[0067] 3. Deposit I layer phosphorus-doped amorphous silicon thin film: substrate temperature 500 o C, SiH 4 :H 2 :PH 3 =1000sccm: 10000sccm: 1000sccm, the air pressure is 250Pa, the deposition power is 2000W, the radio frequency on-off ratio is 3ms: 75ms, and the deposition time is 500 seconds;

[0068] 4. Deposit II layer phosphorus-doped amorphous silicon film: substrate temperature 500 o C, SiH 4 :H 2 :PH 3 =1000sccm: 10000sccm: 1000sccm, ...

Embodiment 3

[0072] Using the n-type silicon wafer, remove the damaged layer on the surface, and plate the same structure on both sides. The specific treatment is as follows:

[0073] 1. After the silicon wafer is cleaned, put it into the graphite boat;

[0074] 2. Deposition of silicon oxide: substrate temperature 400 o C, with laughing gas (N 2 O) is the reaction gas, the flow rate is 3000sccm, the air pressure is 200Pa, the deposition power is 2000W, the radio frequency on-off ratio is 2ms: 10ms, and the deposition time is 120 seconds;

[0075] 3. Deposit I-layer boron-doped amorphous silicon film: substrate temperature 600 o C, SiH 4 :H 2 :B 2 h 6 =1500sccm: 2000sccm: 1500sccm, the air pressure is 250Pa, the deposition power is 1800W, the radio frequency on-off ratio is 3ms: 45ms, and the deposition time is 600 seconds;

[0076] 4. Deposit II layer of boron-doped amorphous silicon film: substrate temperature 600 o C, SiH 4 :H 2 :B 2 h 6 =1600sccm: 10000sccm: 1600sccm, the ...

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Abstract

The invention discloses a method for preparing a polycrystalline silicon passivation contact structure through tubular PECVD. The method includes the following steps that: a doped amorphous silicon film is prepared on the surface of an oxide and / or nitride of silicon through adopting the tubular PECVD; and a polycrystalline silicon passivation contact structure is obtained through high-temperaturecrystallization annealing. With the method of the invention adopted, a high-quality TOPCon structure can be prepared; the passivation efficiency of the TOPCon structure is completely equivalent to that of an LPCVD technology, in particular, the iVoc of an n-type silicon wafer adopting n-type TOPCon double-sided passivation can reach 720 to 750mV; and a production process can be greatly simplified.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a polysilicon passivation contact (TOPCon) structure by tubular PECVD. Background technique [0002] The Tunneling Oxygen / Polysilicon Passivated Contact (TOPCon) solar cell is a new type of silicon solar cell proposed by the Fraunhofer Institute in Germany in 2013. Cover a layer of ultra-thin silicon oxide layer with a thickness of less than 2nm on the back of the battery sheet, and then cover a layer of doped amorphous silicon layer, and then undergo high-temperature annealing to form heavily doped polysilicon. Taking n-type phosphorus doped TOPCon as an example, the basic structure of the battery is as follows figure 1 As shown, the structure of a typical passivation sheet is as follows figure 2 shown. The back structure of the battery is n-type silicon chip / ultra-thin tunnel oxide layer / n+ polysilicon layer / metal electrode layer. Depending on th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/068
CPCY02E10/546Y02P70/50
Inventor 曾俞衡闫宝杰叶继春廖明墩
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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