Unlock instant, AI-driven research and patent intelligence for your innovation.

A method for depositing ingan thin films on Si(100) substrates by a dual-path pulsed laser

A pulsed laser deposition, dual optical path technology, applied in circuits, vacuum evaporation plating, coatings, etc., can solve problems such as difficult to prepare alloy thin films, and achieve the effects of saving equipment procurement costs, simple growth process, and low cost

Active Publication Date: 2021-04-30
GUANGXI UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the current mainstream pulsed laser deposition equipment generally adopts the design concept of single optical path, which has great limitations, and it is difficult to prepare super-doped and composition-tunable alloy films.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for depositing ingan thin films on Si(100) substrates by a dual-path pulsed laser
  • A method for depositing ingan thin films on Si(100) substrates by a dual-path pulsed laser
  • A method for depositing ingan thin films on Si(100) substrates by a dual-path pulsed laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The present invention will be further described below in conjunction with specific embodiments.

[0039] Please refer to figure 1 , a dual optical path pulsed laser deposition device, including a growth chamber cavity 10, a base is provided in the central area below the growth chamber cavity 10, and four evenly arranged turntables for placing targets are arranged on the base 5. The base and the turntable 5 are respectively driven to rotate by the driving mechanism, so that the target can rotate with the turntable 5; a mechanical pump connection valve 11 and a molecular pump are also provided on the lower side wall or bottom wall of the growth chamber cavity 10 Connect the valve 12 so as to connect the mechanical pump and the molecular pump to evacuate the growth chamber cavity 10; an auxiliary gas pipeline 6 is provided at the middle and lower position of the growth chamber cavity 10 to replenish O in time during the coating process. 2 and N 2 A quartz window is respe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a dual-path pulsed laser deposition device and its application method for depositing an InGaN film on a Si(100) substrate. The device can divide the laser into two paths to irradiate the target. The specific method is: clean the Place the Si(100) substrate on the substrate table and heat it to 650°C-750°C and keep it warm for 50-70min; deposit TiN, AlN, GaN, and InGaN layers in sequence, and the laser energy used is 150-250mJ and 50-150mJ respectively , 200-300mJ, 100-200mJ, the deposition time is 10-30min, 30-50min, 50-70min, 50-70min respectively; the InGaN layer is carried out by a dual optical path process. The invention can improve the quality of thin film crystals, and can also greatly improve the efficiency of devices such as semiconductor lasers, light-emitting diodes and solar cells.

Description

technical field [0001] The invention relates to a double-optical-path pulsed laser deposition (PLD) coating method and application thereof, which is specifically used for preparing epitaxial thin films and thin-film photoelectric devices, especially InGaN solar cells. Background technique [0002] PLD technology is developed along with the development of laser technology. In the 1960s, shortly after the birth of the world's first ruby ​​laser, it was discovered that when a laser beam irradiates a solid material, electrons, ions and neutral atoms run out of the solid surface and form a glowing plasma near the surface Zone, the temperature is 103 ~ 104K, and then people thought that if these ablatives were condensed on the substrate, a thin film could be obtained, so the concept of laser coating came into being. So people began to study the interaction between laser and matter. [0003] At present, photoelectric thin-film devices such as solar cells, LEDs, and LDs are mainly...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02C23C14/28C23C14/06C23C14/02C23C14/58
Inventor 陆珊珊刘宇伦莫观孔莫组康沈晓明何欢符跃春
Owner GUANGXI UNIV