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Laser etching method of MEMS silicon structure

A laser etching method and silicon structure technology, applied in the field of micromachining, can solve the problems of poor etching morphology, large heat-affected area, particle pollution, etc., and achieve the effects of reducing dissipation, high radiation intensity, and reducing repetition frequency

Inactive Publication Date: 2019-06-07
BEIJING AUTOMATION CONTROL EQUIP INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned prior art, the purpose of the present invention is to provide a laser etching method for MEMS silicon structure, which solves the problems of poor etching morphology, large heat-affected area and serious particle pollution in the surface etching of silicon materials by nanosecond lasers. Improve the processing effect of laser etching

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  • Laser etching method of MEMS silicon structure
  • Laser etching method of MEMS silicon structure
  • Laser etching method of MEMS silicon structure

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Embodiment Construction

[0032] A method for laser etching of a MEMS silicon structure according to the present invention will be described in detail below in conjunction with specific embodiments.

[0033] Such as figure 1 Shown, the laser etching method of a kind of MEMS silicon structure of the present invention comprises the following steps:

[0034] Step 1, the laser beam 11 partially irradiates the surface of the silicon material 13 through the objective lens 12, and the silicon material 13 is heated after absorbing part of the energy;

[0035] Step 2, the surface of the irradiated area is melted into a melting zone 14, part of the silicon material 13 is vaporized into smoke and molten spatter 15, and part of it is scattered on the processing surface of the silicon material 13 to form solid spatter 16;

[0036] Step 3: After the laser irradiation is completed, the silicon material 13 is condensed, showing heat-affected zones 17 and cracks 18 .

[0037] The laser beam 11 is generated by an ultr...

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Abstract

The invention belongs to the technical field of microprocessing, and relates to a laser etching method of an MEMS silicon structure. The laser etching method comprises the following steps: a laser beam conducts local irradiation on the surface of a silicon material through an objective lens, and the silicon material absorbs part of energy and then is heated; the surface of an irradiation area is molten into a molten area, part of the molten silicon material is vaporized into a smoke plume and molten splashes, and the molten part is scattered on the processed surface of the silicon material toform solid splashes; and laser irradiation is completed, the silicon material is condensed, and heat affected areas and cracks appear on the irradiation area of the silicon material. Under the condition that the average power and pulse width of the laser beam are not changed, influences of recast layers and pollution of the surrounding splashes can be reduced by decreasing the repetition frequencyof a laser device and increasing single-time pulse energy; through defocusing amount compensation, the maximum local irradiation intensity and the minimum etching diameter are obtained, and etching splashing is relieved; and through an auxiliary vacuum environment, dissipation in the laser transmitting process is reduced, the relatively-high irradiation intensity is obtained, and the heat affected areas are reduced.

Description

technical field [0001] The invention belongs to the technical field of micromachining, and relates to a laser etching method for MEMS silicon structure. Background technique [0002] In the process of silicon MEMS gyro sensitive structure processing, the surface etching process is used to realize the fine adjustment of the sensitive structure, which can effectively reduce the influence of non-ideal factors such as frequency mismatch and spindle deflection introduced in the processing process on the overall performance of the device. Thereby improving device performance and increasing yield. [0003] Laser etching has the characteristics of no stress introduction, flexible processing methods, convenient operation, and low cost. It is widely used in the surface processing of silicon materials. Lasers commonly used in laser etching can be divided into nanosecond lasers, picosecond lasers, and femtosecond lasers according to different pulse widths. Among them, femtosecond laser...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/362B23K26/12
Inventor 郭中洋刘飞窦茂莲盛洁苏翼夏春晓王登顺刘凯
Owner BEIJING AUTOMATION CONTROL EQUIP INST
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