Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of manufacturing polymer positive temperature coefficient thermistor element and crystallization device

A technology of thermistor element and positive temperature coefficient, which is applied in the direction of resistance manufacturing, electrical components, resistors, etc., can solve the problems of poor consistency of resistance value, poor withstand voltage performance, internal resistance dispersion, etc.

Inactive Publication Date: 2019-06-07
SHENZHEN JINRUI ELECTRONICS MATERIAL
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the present invention provides a manufacturing method and a crystallization device of a polymer positive temperature coefficient thermistor element, which solves the poor consistency of resistance value after welding, internal resistance dispersion and withstand voltage performance of the existing polymer positive temperature coefficient thermistor element poor technical problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of manufacturing polymer positive temperature coefficient thermistor element and crystallization device
  • Method of manufacturing polymer positive temperature coefficient thermistor element and crystallization device
  • Method of manufacturing polymer positive temperature coefficient thermistor element and crystallization device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The technical solutions of the present invention will be further described in more detail in conjunction with the accompanying drawings and specific embodiments. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0021] In the description of the present invention, it should be understood that the terms "first", "second" and so on are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance. In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of thermistors, and discloses a method of manufacturing a polymer positive temperature coefficient thermistor element and a crystallization device. The method of manufacturing the polymer positive temperature coefficient thermistor element comprises steps: a polymer and a conductive material form a granular composite material through mixed plasticization and granulation; extrusion coating and copper foil electrode rolling coating are carried out to form a polymer positive temperature coefficient thermistor chip material; the chip material is subjected to radiation crosslinking and is cut into a chip; the polymer positive temperature coefficient thermistor chip and a pole piece are subjected to high temperature welding; and the polymer positive temperature coefficient thermistor element after high temperature welding is subjected to constant temperature crystallization at a preset constant temperature range and a preset time. The crystallizable part in the polymer can be fully crystallized through constant temperature crystallization, and the polymer material and the conductive material form a stable network structure, thereby solving theproblem of poor resistance consistency and internal resistance dispersion, and improving the voltage withstanding performance.

Description

technical field [0001] The invention relates to the technical field of thermistors, in particular to a manufacturing method and a crystallization device of a polymer positive temperature coefficient thermistor element. Background technique [0002] Polymeric positive temperature coefficient thermistor devices (Polymeric Positive Temperature Coefficient, PPTC) are made of composite materials composed of semi-crystalline polymers and conductive substances. At normal temperature, the polymer binds the conductors in a crystalline structure to form a low-impedance closely-arranged conductive chain. When a strong current passes or the temperature of the external environment rises, the temperature of the element will be higher than the action temperature of the polymer. The melting and expansion of the polymer causes the conductive matter to form an irregular arrangement, and the impedance of the component increases rapidly to protect the circuit. [0003] In the actual production...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01C17/00
Inventor 曾庆煜
Owner SHENZHEN JINRUI ELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com