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Scanning electron microscope in-situ electrochemical detection chip and manufacturing method thereof

An in-situ electrochemical and scanning electron microscope technology, applied in chemical instruments and methods, ion implantation plating, coating, etc., can solve the problem of inaccurate post-control potential, achieve simple operation, high safety, and reduce background noise. Effect

Active Publication Date: 2019-06-11
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a scanning electron microscope in-situ electrochemical detection chip and its manufacturing method that can realize the integrated design of the in-situ electrochemical detection chip and solve the problems of inaccurate control of the potential after the electric field is introduced into the above-mentioned in-situ chip.

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  • Scanning electron microscope in-situ electrochemical detection chip and manufacturing method thereof
  • Scanning electron microscope in-situ electrochemical detection chip and manufacturing method thereof
  • Scanning electron microscope in-situ electrochemical detection chip and manufacturing method thereof

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Embodiment 1

[0044] Embodiment 1 of the present invention discloses a scanning electron microscope in-situ electrochemical detection chip, such as Figure 1~5 As shown, its structure includes an upper sheet 1 and a lower sheet 7. The upper sheet 1 is made of an upper silicon substrate 3, and the upper silicon substrate 3 is provided with a first upper silicon nitride layer 2 and a first lower silicon nitride layer 4; a first upper silicon nitride layer is provided 2 and the upper silicon substrate 3 of the first lower silicon nitride layer 4 are provided with two symmetrical liquid injection ports 5 and a viewing window 6; the lower sheet is made of the lower silicon substrate 12, and the lower silicon A first upper insulating layer 10 and a second upper silicon nitride layer 11 are provided above the substrate 12, and a first lower insulating layer 14 and a second lower silicon nitride layer 13 are provided below the lower silicon substrate 12. One side of the substrate 12 is provided wi...

Embodiment 2

[0070] Embodiment 2 of the present invention discloses a scanning electron microscope in-situ electrochemical detection chip, such as Figure 1~5 As shown, its structure includes an upper sheet 1 and a lower sheet 7. The upper sheet 1 is made of an upper silicon substrate 3, and the upper silicon substrate 3 is provided with a first upper silicon nitride layer 2 and a first lower silicon nitride layer 4; a first upper silicon nitride layer is provided 2 and the upper silicon substrate 3 of the first lower silicon nitride layer 4 are provided with two symmetrical liquid injection ports 5 and a viewing window 6; the lower sheet is made of the lower silicon substrate 12, and the lower silicon A first upper insulating layer 10 and a second upper silicon nitride layer 11 are provided above the substrate 12, a first lower insulating layer 14 and a second lower silicon nitride layer 13 are provided below the lower silicon substrate 12, and a first One side of the silicon substrate 1...

Embodiment 3

[0096] Embodiment 3 of the present invention discloses a scanning electron microscope in-situ electrochemical detection chip, such as Figure 1~5 As shown, its structure includes an upper sheet 1 and a lower sheet 7. The upper sheet 1 is made of an upper silicon substrate 3, and the upper silicon substrate 3 is provided with a first upper silicon nitride layer 2 and a first lower silicon nitride layer 4; a first upper silicon nitride layer is provided 2 and the upper silicon substrate 3 of the first lower silicon nitride layer 4 are provided with two symmetrical liquid injection ports 5 and a viewing window 6; the lower sheet is made of the lower silicon substrate 12, and the lower silicon A first upper insulating layer 10 and a second upper silicon nitride layer 11 are provided above the substrate 12, a first lower insulating layer 14 and a second lower silicon nitride layer 13 are provided below the lower silicon substrate 12, and a first One side of the silicon substrate 1...

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Abstract

The invention discloses a scanning electron microscope in-situ electrochemical detection chip and a manufacturing method thereof, which relates to an electrochemical detection chip. The scanning electron microscope in-situ electrochemical detection chip is provided with an upper sheet and a lower sheet, wherein the upper sheet is made of a silicon substrate with silicon nitride layers on two sides, and two symmetrical liquid injection ports and a viewing window are arranged on the silicon substrate with silicon nitride layers on both sides; the lower sheet is made of a silicon substrate with an insulating layer and a silicon nitride layer on two sides. One side of the silicon substrate with the insulating layer and the silicon nitride layer on two sides is provided with a reference electrode, a working electrode and a counter electrode. The upper sheet and the lower sheet are bonded by a metal bonding layer. The manufacturing method comprises the following steps: 1) preparing an uppersheet; 2) preparing a lower sheet; and 3) bonding the upper sheet and the lower sheet through a metal bonding layer to form an integrated scanning electron microscope in-situ electrochemical detectionchip. When in use, the sample can be injected directly through a liquid injection port and then the injection port is closed, the operation is convenient.

Description

technical field [0001] The invention relates to an electrochemical detection chip, in particular to a scanning electron microscope in-situ electrochemical detection chip and a manufacturing method thereof. Background technique [0002] Scanning Electron Microscope (SEM) is a microscopic morphology observation method between the transmission electron microscope and the optical microscope. It can directly use the material properties of the sample surface material for microscopic imaging and observe the uneven surface of various samples. The advantages of the fine structure. Its sample carrier sample table is equipped with an in-situ detection chip, which can make the resolution reach the atomic level. The in-situ detection chip can integrate physical and chemical functions, realize patterning and functionalization, and has great advantages in molecular biology, chemical industry, and medical semiconductor electronic materials. High application value (Nishiyama, H.etal.Atmosph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01L3/00C23C14/16C23C14/24C23C14/30
Inventor 廖洪钢江友红林家耀
Owner XIAMEN UNIV