Asymmetric MZI optical waveguide-based temperature sensor and preparation method thereof
A temperature sensor and optical waveguide technology, applied in the direction of physical/chemical change thermometers, light guides, thermometers, etc., can solve the problems of losing temperature sensing function and limiting the practical application of temperature sensors with MZI optical waveguide structure, and achieve the goal of being suitable for large Large-scale production, low production cost, and large thermo-optic coefficient
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[0044] Example 1
[0045] Cleaning treatment of silicon substrate: Soak the silicon substrate in acetone solution for ultrasonic cleaning for 8 minutes, then wipe it with acetone and ethanol cotton balls in turn, rinse with deionized water, dry with nitrogen, and finally at 110 ° C. Bake for 1.5 hours to remove moisture.
[0046] The polymer waveguide undercladding was prepared by spin coating: the polymer material PMMA was spin-coated on the cleaned silicon wafer substrate, and the spin-coating speed was controlled at 3000 rpm, and then the film was baked at 120 °C for 2.5 hours , a waveguide lower cladding with a thickness of 4 μm was obtained.
[0047]The waveguide grooves were prepared by standard photolithography and dry etching processes: first, an Al mask with a thickness of 100 nm was evaporated on the prepared polymer lower cladding layer, and spin-coated on the Al film by a spin coating process A layer of positive photoresist BP212 with a thickness of 2 μm was pre-...
Example Embodiment
[0052] Example 2
[0053] Cleaning treatment of silicon substrate: Soak the silicon substrate in acetone solution for ultrasonic cleaning for 8 minutes, then wipe it with acetone and ethanol cotton balls in turn, rinse with deionized water, dry with nitrogen, and finally at 110 ° C. Bake for 1.5 hours to remove moisture.
[0054] The polymer waveguide undercladding was prepared by spin coating: the polymer material PMMA was spin-coated on the cleaned silicon wafer substrate, and the spin-coating speed was controlled at 3000 rpm, and then the film was baked at 120 °C for 2.5 hours , a waveguide lower cladding with a thickness of 4 μm was obtained.
[0055] The waveguide grooves were prepared by standard photolithography and dry etching processes: first, an Al mask with a thickness of 100 nm was evaporated on the prepared polymer lower cladding layer, and spin-coated on the Al film by a spin coating process A layer of positive photoresist BP212 with a thickness of 2 μm was pre...
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