Composite RC-LIGBT (Lateral Insulated Gate Bipolar Transistor) device with L-shaped SiO<2> isolation layer

Abstract

The invention relates to a composite RC-LIGBT (Lateral Insulated Gate Bipolar Transistor) device with L-shaped SiO<2> isolation layer. An LDMOS region and an LIGBT region are divided by taking the L-shaped SiO<2> isolation layer as a boundary. In a working process, the device has the following advantages that (1), an electric field peak of the device is reduced, a surface of the device is prevented from being broken down in advance, and a breakdown voltage is improved; (2), when forward switch-on is carried out, in a conversion process of three modes, the device is in a stable transition state, and current sudden change condition is avoided; and (3), when reverse switch-on is carried out, the LDMOS region works independently, an N-Collector provides electrons, under a reverse bias voltageof an emitter, a P-body directly injects holes into a drift region, and reverse bipolar mode switch-on capability is endowed to the device. Under the same parameter condition, through simulation verification, a breakdown voltage of the composite RC-LIGBT device provided by the invention is improved to 206.05V, a Snapback phenomenon is avoided, and the reverse switch-on capability is achieved.

Description

technical field [0001] The invention belongs to the field of semiconductor power devices, in particular to an L-type SiO 2 Composite RC-LIGBT device with isolation layer. Background technique [0002] LIGBT (Lateral Insulated Gate Bipolar Transistor) based on SOI material has the advantages of good insulation performance, small parasitic capacitance, low leakage current and high integration, and its manufacturing process is compatible with SOI-CMOS process, so it is easy to realize. Therefore, it will become one of the core components of intelligent power integrated circuits and is widely used in home appliances, environmentally friendly automobiles and industrial production. It is a semiconductor power device with great potential in the future market. However, the LIGBT structure is equivalent to two back-to-back diodes during reverse conduction, and the PN junction formed by the P-Collector and N-buffer at the collector is always in a reverse bias state, so LIGBT does not...

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Problems solved by technology

And as the electron current flowing in the N-buffer increases, when V PN It will exceed 0.8V. At this time, the PN junction between the N-buffer and the P-Collector will be opened, and the P-Collector will inject holes into the drift region. At this time, the conversion of the conduction mode will be realized. This pr

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